Operation of α(6H)-SiC pressure sensor at 500°C

Okojie, Robert S.; Ned, A.A.; Kurtz, A. D.

doi:10.1109/sensor.1997.635501

Cited by 30 publications

(27 citation statements)

References 3 publications

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“…After improving the high-temperature stability, a pressure sensor with operating temperatures up to 350 8C was reported [124]. In two subsequent publications a pressure sensor which was characterized from room temperature up to 500 8C was presented [125] and also an improved version up to 600 8C. It was fabricated by using a photoelectrochemical etching process [34,35] to structure the ntype epilayer on the top, which was deposited on a p-type layer on a 6H-SiC substrate supplied by Cree [3].…”

Section: Sic Pressure Sensorsmentioning

confidence: 99%

High—temperature Sensors Based on SiC and Diamond Technology

et al. 1999

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Section: Sic Pressure Sensorsmentioning

confidence: 99%

High—temperature Sensors Based on SiC and Diamond Technology

et al. 1999

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“…Due to the continuous progress of micromachining technology in last decades, micro-electromechanical system (MEMS) sensors started playing a major role in pressure measurement [9]. Nowadays there are many types of pressure sensing technologies for different applications, such as capacitive pressure sensors that utilize a diaphragm and a pressure cavity to create a variable capacitance [10–13]; piezoelectric pressure sensors that utilize the piezoelectric effect in some materials to measure the strain caused by pressure [14–18]; surface acoustic wave (SAW) pressure sensors that utilize the phase velocity variation of surface acoustic wave on piezoelectric substrate when pressure is applied [19–23]; optical pressure sensors in which the characteristics of optical signal such as intensity, polarization, phase or spectrum are modulated by the pressure stimulus [24–29]; and the most commonly used piezoresistive pressure sensors, for which the resistance of the piezoresistive material can be altered by the pressure applied on it [30–34]. …”

Section: Introductionmentioning

confidence: 99%

A Harsh Environment Wireless Pressure Sensing Solution Utilizing High Temperature Electronics

Yang

2013

Sensors

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Pressure measurement under harsh environments, especially at high temperatures, is of great interest to many industries. The applicability of current pressure sensing technologies in extreme environments is limited by the embedded electronics which cannot survive beyond 300 °C ambient temperature as of today. In this paper, a pressure signal processing and wireless transmission module based on the cutting-edge Silicon Carbide (SiC) devices is designed and developed, for a commercial piezoresistive MEMS pressure sensor from Kulite Semiconductor Products, Inc. Equipped with this advanced high-temperature SiC electronics, not only the sensor head, but the entire pressure sensor suite is capable of operating at 450 °C. The addition of wireless functionality also makes the pressure sensor more flexible in harsh environments by eliminating the costly and fragile cable connections. The proposed approach was verified through prototype fabrication and high temperature bench testing from room temperature up to 450 °C. This novel high-temperature pressure sensing technology can be applied in real-time health monitoring of many systems involving harsh environments, such as military and commercial turbine engines.

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“…Although conventional wet chemical techniques are not effective in etching structures into SiC substrates, several electrochemical etch processes have been demonstrated and used in the fabrication of bulk micromachined SiC MEMS devices from 6H-and 4H-SiC substrates. Examples of such structures include pressure sensors [14], accelerometers [15], and more recently, biosensors [16]. It is worth mentioning that, the good biocompatibility of devices made with common micromachining technologies allows the exploration of these technologies.…”

Section: Bulk Micromachiningmentioning

confidence: 99%