Operation of nanosilicon ballistic electron emitter in liquid water and hydrogen generation effect

Koshida, Nobuyoshi; Ohta, Toshiyuki; Gelloz, Bernard

doi:10.1063/1.2724890

Cited by 36 publications

(30 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It may be used to produce hydrogen by reducing H þ ions without the need of a counter electrode (necessary in electrolysis of water) and without generating by-products such as oxygen [141]. A hydrogen generation rate of 2 mmol/h was obtained, in accordance with the diode emission current.…”

Section: Sensing Based On Change Of Conductivitymentioning

confidence: 86%

Silicon Nanocrystals in Porous Silicon and Applications

Gelloz

2010

Silicon Nanocrystals

Self Cite

View full text Add to dashboard Cite

Section: Sensing Based On Change Of Conductivitymentioning

confidence: 86%

Silicon Nanocrystals in Porous Silicon and Applications

Gelloz

2010

Silicon Nanocrystals

Self Cite

View full text Add to dashboard Cite

“…Hydrogen gas has been generated by the chemical reaction in liquid water due to the electron injection during anodized nanocrystalline emitter operation. 5) Electron emission from the porous Si surface occurred because of the drift of electrons toward the surface due to the electric field in the porous Si layer with the applied positive voltage at the surface; [1][2][3][4][5] therefore, the direction of electron emission is the same as the direction of drift and acceleration of electrons in the porous Si layer. In this study, electron emission from the cross-sectional surface of porous Si layer on a glass substrate was demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Electron Emission from Cross-Sectional Surface of Porous Si on Glass Substrate

Higa¹

2010

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The measurement of electron emission from the cross-sectional surface of porous Si layer on a glass substrate is demonstrated. The porous Si is formed by anodization, and subsequently bonded on a glass substrate with an Al electrode by anodic bonding. The electron emission device structure is composed of a Au electrode, a porous Si layer, and a glass substrate with an Al electrode. This structure is cut into two pieces during the formation of the cross-sectional surface of porous Si. The measurement of electron emission is carried out using a diode configuration in a vacuum chamber. A collector is placed close to the cross-sectional surface of porous Si. The negative voltages are applied at the Au electrode and electron emission from the cross-sectional surface of porous Si layer occurs. The characteristics of emission current are measured using the variation of applied negative voltage, the stability of electron emission, and the change in location of the Au electrode at the edge of the cross section of porous Si layer. #

show abstract

“…In recent years, nanocrystalline silicon has found substantial applications in a variety of areas including visible electroluminescent devices [1][2][3] field-induced ballistic electron emitter [4], thermally induced ultrasonic emitter [5], and biocompatible scaffold [6] to name a few. Nanocrystallization in a-Si has been achieved by different methods starting from solid phase crystallization (SPC) [7], excimer laser annealing [8] and metal induced crystallization (MIC) [9].…”

Section: Introductionmentioning

confidence: 99%

Chromium‐Induced Nanocrystallization of a‐Si Thin Films into the Wurtzite Structure

Kumar

Krishna

2008

Journal of Nanomaterials

View full text Add to dashboard Cite

Chromium metal-induced nanocrystallization of amorphous silicon (a-Si) thin films is reported. The nanocrystalline nature of these films is confirmed from X-ray diffraction and Raman spectroscopy. Significantly, the deconvolution of Raman spectra reveals that the thin films were crystallized in a mixed phase of cubic diamond and wurzite structure as evidenced by the lines at 512 and 496 cm−1, respectively. The crystallite sizes were between 4 to 8 nm. Optical properties of the crystallized silicon, derived from spectral transmittance curves, revealed high transmission in the region above the band gap. Optical band gap varied between 1.3 to 2.0 eV depending on the nature of crystallinity of these films and remained unaltered with increase in Cr addition from 5 to 30%. This signifies that the electronic structure of the nanocrystalline Silicon films is not affected considerably inspite of the presence of metal silicides and the process of crystallization.

show abstract

Operation of nanosilicon ballistic electron emitter in liquid water and hydrogen generation effect

Abstract: Annealing effects on the operation stability of ballistic electron emission from electrochemically oxidized nanocrystalline silicon diodes Efficient and ballistic cold electron emission from porous polycrystalline silicon diodes with a porosity multilayer structure J.

Cited by 36 publications

References 24 publications

Silicon Nanocrystals in Porous Silicon and Applications

Silicon Nanocrystals in Porous Silicon and Applications

Electron Emission from Cross-Sectional Surface of Porous Si on Glass Substrate

Chromium‐Induced Nanocrystallization of a‐Si Thin Films into the Wurtzite Structure

Contact Info

Product

Resources

About