Operation of multi-level phase change memory using various programming techniques

Lin, Jun-Tin; Liao, Yunlong; Chiang, Meng-Hsueh; Hsu, Wei‐Chou

doi:10.1109/icicdt.2009.5166295

Cited by 12 publications

(1 citation statement)

References 4 publications

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“…The above considerations lead to the need for experimentally investigating the behaviour of the memory cell under different programming conditions, so as to optimize materials, cell architecture, and programming pulses and algorithms [11] during the research and development phase, and (statistically) monitor the actual cell performance during the production phase. To this end, adequate programming pulses must be generated and fed to the cells.…”

Section: Introductionmentioning

confidence: 99%

High-swing buffer for programmable resistive memories

Covi

Cabrini

Torelli

2013

Proceedings of 2013 International Conference on IC Design &Amp; Technology (ICICDT)

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The study of the behaviour of the cell of emerging memories (such as PCMs and ReRAMs) is fundamental to optimize materials, cell architecture, and programming pulses and algorithms as well as to monitor the actual cell performance. Since the final state of the above memory cells is dependent on the applied programming pulse shape, a buffer able to feed the cell with adequate electrical pulses is needed. In this paper, we propose a buffer targeted at this application, which is able to reproduce fast pulses (time duration of 50 ns and rise and fall times down to 15 ns) and drive up to 2 mW into a 10 kΩ load, while keeping the input-to-output voltage error below 0.4%.

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Section: Introductionmentioning

confidence: 99%