Operation of functional circuit elements using BEOL-transistor with InGaZnO channel for on-chip high/low voltage bridging I/Os and high-current switches

Kaneko, K.; Sunamura, H.; Narihiro, M.; Saito, Shinobu; Furutake, N.; Hane, M.; Hayashi, Yoshihiro

doi:10.1109/vlsit.2012.6242492

Cited by 20 publications

(16 citation statements)

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“…2. [10][11][12][13][14][15] As written in the conference proceeding, ability of high voltage operation with small feature size is expected as an interface bridge for signal conversion between CMOS core-logics with lowvoltages and peripheral devices driven with high-voltages. A p-type amorphous SnO TFT is developed as a complement component to n-type IGZO TFTs.…”

Section: Power Devicesmentioning

confidence: 99%

Emerging applications using metal-oxide semiconductor thin-film devices

Kimura

2019

Jpn. J. Appl. Phys.

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Metal-oxide semiconductors are widely used for thin-film transistors for flat-panel displays, but they do not seem to be limited to the conventional applications. In this review, emerging applications using metal-oxide semiconductor thin-film devices are reviewed, which may be novel killer applications in the future. First, the essential advantages are enumerated, and, next, based on the essential advantages, several proposals of emerging applications from many organizations are introduced. First, power devices using metal-oxide semiconductor thin-film devices are proposed, because they can be tolerant against high voltage, and the carrier mobility is high. Second, sensing devices are proposed, because the electrical characteristic can be sensitive to peripheral environment, and the thin-film devices can be fabricated on large areas with low cost. Third, thermoelectric devices are proposed, because the Seebeck coefficients can be improved, and the cost performance is the most important. Fourth, computing applications, including many kinds of related applications, are proposed, where various essential advantages are available each. Finally, neuromorphic systems are proposed, where the metal-oxide semiconductor thin-film devices have the potential possibility to be key components in neuromorphic systems for artificial intelligences, which are central concepts in smart societies.

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Section: Power Devicesmentioning

confidence: 99%

Emerging applications using metal-oxide semiconductor thin-film devices

Kimura

2019

Jpn. J. Appl. Phys.

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“…This transistor uses a widebandgap semiconductor InGaZnO (IGZO) as its N-type TFT channel material, Cu metallization as its gate material, and silicon nitride (SiN) as its TFT gate insulator, respectively [13]. Figure 14 shows a cross section of a BEOL transistor.…”

Section: Novel Beol Transistormentioning

confidence: 99%

Past and Future Technology for Mixed Signal LSI

Hatasako

Nitta

Hane

et al. 2014

IEICE Trans. Electron.

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SUMMARYThis paper discusses Mixed Signal LSI technology with embedded power transistors. Trends in Mixed Signal LSI technology are explained at first. Mixed signal LSI technology has proceeded with the help of fine fabrication technology and SOI technology. The BEOL transistor is a new development, which uses InGaZnO (IGZO) as its TFT channel material. The BEOL transistor is one future device which enables 3D IC and chip shrinking technology.

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“…Recently, the use of the InGaZnO TFT for Si-LSI back-end-of-line (BEOL) TFT has been reported. [26][27][28][29][30][31] The back-gate structure is unsuitable for the realization of the BEOL TFT because it has a high parasitic capacitance and poor scalability. Therefore, the development of top-gate self-aligned InGaZnO TFTs is required.…”

Section: Introductionmentioning

confidence: 99%

Physical mechanism of source and drain resistance reduction for high-performance short-channel InGaZnO thin-film transistors

Ota

Sakuma

Irisawa

et al. 2015

Jpn. J. Appl. Phys.

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We systematically study the mechanism of source and drain parasitic resistance reduction in amorphous InGaZnO thin-film transistors. Hall measurement shows that parasitic resistance is reduced by the increase in carrier density regardless of the source and drain processes. The results of photoluminescence, high-angle annular dark field scanning transmission electron microscope (HAADF-STEM), electron energy-loss spectroscopy (EELS), and X-ray photoelectron spectroscopy (XPS) analyses indicate that the fluctuation of In concentration at the InGaZnO surface is responsible for increase in carrier density. A top-gate InGaZnO transistor fabricated with a source drain resistance reduction process shows good short-channel immunity. The short-channel InGaZnO thin-film transistor with reduced source drain resistance is promising as the high-density back-end-of-line transistor in Si LSI.

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Operation of functional circuit elements using BEOL-transistor with InGaZnO channel for on-chip high/low voltage bridging I/Os and high-current switches

Cited by 20 publications

References 0 publications

Emerging applications using metal-oxide semiconductor thin-film devices

Emerging applications using metal-oxide semiconductor thin-film devices

Past and Future Technology for Mixed Signal LSI

Physical mechanism of source and drain resistance reduction for high-performance short-channel InGaZnO thin-film transistors

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