Operation of a bipolar transistor with a tunnel MOS emitter and an induced base from 4.2 to 300K

Grekhov, I. V.; Schmalz, K.; Shulekin, A. F.; Tittelbach‐Helmrich, K.; Vexler, M. I.

doi:10.1016/s0011-2275(98)00021-6

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Operation of a bipolar transistor with a tunnel MOS emitter and an induced base from 4.2 to 300K

Cited by 4 publications

References 14 publications

Operational Amplifiers in the Temperature Range from 300 to 4 K

Operational Amplifiers in the Temperature Range from 300 to 4 K

High-gain MOS tunnel emitter transistors

On the Effect of Transverse Quantum Confinement on the Electrical Characteristics of a Submicrometer-Sized Tunnel MOS Structure

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