Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers

Abstract

We demonstrate a novel process for fabrication of GaAs based self-aligned lasers based upon a single overgrowth. A lattice matched n-doped InGaP layer is utilized for both electrical and optical confinement. We present operating characteristics such as external differential quantum efficiency, T-zero and far field as a function of stripe width. #

Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM

“…Lattice-matched In 0.485 Ga 0.515 P/GaAs hetero-structures are becoming major III-V semiconductor systems, because compared with AlGaAs/GaAs systems, they have lower reactivity with oxygen, higher number of reduced DX centers [1], and lower interfacial recombination rates [2]. InGaP/GaAs hetero-structures are thus attractive alternatives to AlGaAs/GaAs systems for applications in hetero-structure field-effect transistors (HFETs) [3,4], hetero-junction bipolar transistors (HBTs) [5,6], high power lasers [7][8][9], and solar energy conversion devices [10][11][12].…”