Open-tube Zn diffusion in GaAs using diethylzinc and trimethylarsenic: Experiment and model

Abstract

We have characterized the diffusion of Zn into GaAs from the organometallic sources diethylzinc and trimethylarsenic. This method produces surface hole concentrations in excess of 1020 cm−3 with good control of junction depths as shallow as 0.1 μm. Smooth surface morphology is retained. The profile shape is much more complex than the accepted interstitial-substitutional Zn-diffusion model would predict. To explain the observed profiles, a new model for Zn diffusion is proposed and implemented in a computer simulation.

Experimental and theoretical investigation of zinc diffusion in N-GaSb

“…Figure 9 gives the result of Boltzmann-Ma- tano analysis for the diffusion profile obtained using 11 pieces of Zinc pellets as the diffusion source, the diffusion temperature is 500°C and the diffusion time is 5 h. The rightmost part of Figure 9 where the zinc concentration is very high is not analyzed because that part of the SIMS measurement is not highly reliable. In the subsequent surface region we have [14]. The same results could be obtained for other kink and tail type diffusion profiles in our experiments and literatures.…”

“…The kink-and-tail type profile can also be got from zinc diffusion in GaAs. Bracht and Brotzmann [12,13] simulated the kink-and-tail profiles in GaAs using three kinds of native defects which took part in the different areas, and they thought the near surface kink was a consequence of 0 Ga V and Ga V − controlled dopant diffusion and the profile tail was shaped by the diffusion of 0 Ga I .Reynolds et al [14] also simulated the kink-and-tail profiles from zinc diffusion in GaAs. They first analyzed the zinc concentration profiles using the Boltzmann-Matano method, and got the results that the diffusion coefficient (D) showed different relationship with the zinc concentration (N x , the subscript x is the distance from the surface) in different regions: Table 1 lists the parameters of D i (the diffusion coefficient of…”

The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors

“…Under As-rich conditions, the double-hump Zn profile is obtained in GaAs [1]. In this paper, we found that if Ga atoms were added into the diffusion source, the first hump in Zn profile was "removed".…”

“…The shape of Zn profiles has a direct impact on device performance. However, under constant Zn pressure, Zn profiles in III-V semiconductors don't follow the complementary error function [7], distorted phenomenon occurred in Zn profiles [1][2]; it is difficult to predict the precise diffusion profiles. During Zn diffusion process, the self-diffusion of matrix atoms occurred at the same time, thus the self-diffusion should be taken into account during Zn diffusion.…”

“…Zn diffusion into III-V compound semiconductor is an important process for fabrication of junction field-effect transistors [1], thermophotovoltaic (TPV) cells [2][3][4][5] and infrared detectors [6]. The shape of Zn profiles has a direct impact on device performance.…”