Online Junction Temperature Monitoring for SiC MOSFETs Using Turn-On Delay Time

Qiao, Liang; Wang, Fred; Dyer, Jacob; Zhang, Zheyu

doi:10.1109/apec39645.2020.9124345

Cited by 11 publications

(2 citation statements)

References 9 publications

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“…Other approaches for MOSFET temperature estimation, which involve temperature dependencies of various device parameters, were proposed in [34], [35], [36], and [37]. Jiang et al [34] and Chen et al [35] suggested SiC MOSFETs junction temperature estimation using the dynamic threshold voltage; the method reported in [36] recommended the usage of gate current and the work published in [37] proposed measurement of the turn ON delay. These methods are independent of load current variation, which eliminates the complicated calibration procedure.…”

Section: State Of the Artmentioning

confidence: 99%

Inverter Temperature Monitoring of Cordless Tool Motor Drives

Dianov¹

2023

IEEE Open J. Ind. Electron. Soc.

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Nowadays, with the recent advances in battery technologies, cordless tools are gaining more popularity and many manufacturers have enhanced their series of autonomous devices with powerful instruments like circular saws and punches. However, the development of battery-operated tools is not an easy task and many challenging problems must be solved. The most significant of these are limited working time without recharging and controllability of the motor drives. As a result, tool manufacturers are substituting conventional universal motor drives with permanent magnet synchronous motor drives, which require more complicated electronics, but can provide the desired characteristics. In order to guarantee normal operation and satisfy safety standards, devices have to properly handle any possible hazardous situations. One of these situations is overheating of inverter switches, thus, the temperature of each transistor has to be monitored. This task is typically implemented using negative temperature coefficient (NTC) resistors, whereby voltage is sensed by analog to digital converter of microcontroller. This article proposes a software algorithm for temperature estimation and monitoring of each inverter switch, which allows excludes NTCs, decreasing overall costs and saving space on the printed circuit board. Proper operation of the developed technology is proven by the experimental results and safety certification according to UL60730.

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Section: State Of the Artmentioning

confidence: 99%

Inverter Temperature Monitoring of Cordless Tool Motor Drives

Dianov¹

2023

IEEE Open J. Ind. Electron. Soc.

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“…Table 1 summarizes the characteristics of aging precursors of power devices for condition monitoring that have been proposed in previous studies. Onvoltage, body diode forward voltage, gate threshold voltage, and switching waveforms (e.g., Miller platform voltage and switching time) have been proposed as aging precursors for in-situ condition monitoring systems [13], [16]- [28]. However, these aging precursors are temperature-dependent, and it is difficult to distinguish temperature-induced fluctuations from degradation-induced fluctuations.…”

Section: Introductionmentioning

confidence: 99%

Operational Verification of Gate Drive Circuit With Condition Monitoring Function for Gate Oxide Degradation of SiC MOSFETs

Hayashi,

Wada

2024

IEEE Open J. Power Electron.

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This paper proposes a gate drive circuit with a condition monitoring function for detecting the gate oxide degradation in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). Trapped charges in the gate oxide can cause fluctuations in the on-resistance and gate threshold voltages. These phenomena affect the long-term reliability of power conversion circuits. The proposed condition monitoring function detects the degradation of the gate oxide by measuring the input capacitance C iss versus the gate-source voltage v GS characteristics (C iss -v GS characteristics) of SiC MOSFETs implemented in power conversion circuits. Experiments on the proposed gate drive circuit were conducted using a 400 W-rated buck converter circuit in which a SiC MOSFET is implemented. The experimental results show that the gate drive circuit is capable of online measurement of C iss -v GS characteristics and gate drive at 20 kHz. The online measurement of the C iss -v GS characteristics corresponds to the offline measurement with a measurement instrument, indicating the effectiveness of the gate drive circuit.INDEX TERMS Condition monitoring, gate drive circuit, gate oxide, long-term reliability, SiC MOSFET.

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Gate Drive Circuit with In situ Condition Monitoring System for Detecting Gate Oxide Degradation of SiC MOSFETs

Hayashi

Wãda

2022

2022 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Online Junction Temperature Monitoring for SiC MOSFETs Using Turn-On Delay Time

Cited by 11 publications

References 9 publications

Inverter Temperature Monitoring of Cordless Tool Motor Drives

Inverter Temperature Monitoring of Cordless Tool Motor Drives

Operational Verification of Gate Drive Circuit With Condition Monitoring Function for Gate Oxide Degradation of SiC MOSFETs

Gate Drive Circuit with In situ Condition Monitoring System for Detecting Gate Oxide Degradation of SiC MOSFETs

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