Gate Drive Circuit with In situ Condition Monitoring System for Detecting Gate Oxide Degradation of SiC MOSFETs

Hayashi, Shin’ichiro; Wãda, Keiji

doi:10.1109/apec43599.2022.9773501

Cited by 4 publications

(1 citation statement)

References 34 publications

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“…Therefore, these errors are not considered to be a major issue. The results of measuring the C iss -v GS characteristics of the DUT before and after aging by condition monitoring and a method to improve the measurement resolution of the gate-source voltage v GS has been described in detail in [46].…”

Section: Operational Verification By Experimentsmentioning

confidence: 99%

Operational Verification of Gate Drive Circuit With Condition Monitoring Function for Gate Oxide Degradation of SiC MOSFETs

Hayashi,

Wada

2024

IEEE Open J. Power Electron.

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This paper proposes a gate drive circuit with a condition monitoring function for detecting the gate oxide degradation in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). Trapped charges in the gate oxide can cause fluctuations in the on-resistance and gate threshold voltages. These phenomena affect the long-term reliability of power conversion circuits. The proposed condition monitoring function detects the degradation of the gate oxide by measuring the input capacitance C iss versus the gate-source voltage v GS characteristics (C iss -v GS characteristics) of SiC MOSFETs implemented in power conversion circuits. Experiments on the proposed gate drive circuit were conducted using a 400 W-rated buck converter circuit in which a SiC MOSFET is implemented. The experimental results show that the gate drive circuit is capable of online measurement of C iss -v GS characteristics and gate drive at 20 kHz. The online measurement of the C iss -v GS characteristics corresponds to the offline measurement with a measurement instrument, indicating the effectiveness of the gate drive circuit.INDEX TERMS Condition monitoring, gate drive circuit, gate oxide, long-term reliability, SiC MOSFET.

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Section: Operational Verification By Experimentsmentioning

confidence: 99%