ONE-WATT GaAs <i>p-n</i> JUNCTION INFRARED SOURCE

Carr, W.N.; Pittman, G.E.

doi:10.1063/1.1753837

Cited by 82 publications

(26 citation statements)

References 2 publications

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“…Our finding here is consistent with known physics of radiometry including the consideration of optical etendue conservation 26 . Thermal extraction also shares similar physical principles with light extraction used in light emitting diode 27,28 , and solid immersion lenses used for resolution enhancement 29 .…”

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confidence: 99%

Enhancing far-field thermal emission with thermal extraction

Sergeant

Skauli

et al. 2013

Nat Commun

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The control of thermal radiation is of great current importance for applications such as energy conversions and radiative cooling. Here we show theoretically that the thermal emission of a finite-size blackbody emitter can be enhanced in a thermal extraction scheme, where one places the emitter in optical contact with an extraction device consisting of a transparent object, as long as both the emitter and the extraction device have an internal density of state higher than vacuum, and the extraction device has an area larger than the emitter and moreover has a geometry that enables light extraction. As an experimental demonstration of the thermal extraction scheme, we observe a four-fold enhancement of the far-field thermal emission of a carbon-black emitter having an emissivity of 0.85.

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confidence: 99%

Enhancing far-field thermal emission with thermal extraction

Sergeant

Skauli

et al. 2013

Nat Commun

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“…[27][28][29][30][31][32][33][34][35] The refractive indices are matched but only low aspect ratio micro lenses are typically achieved. Although high aspect ratio GaAs hemispheres have been attempted, 36 no design rules or detailed processing steps have been published and the large volume production capability was unclear.…”

Section: Fabrication Resultsmentioning

confidence: 99%

Ultrahigh luminescence extraction via the monolithic integration of a light emitting active region with a semiconductor hemisphere

Ding

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Investigation of surface plasmon coupling with the quantum well for reducing efficiency droop in GaN-based light emitting diodes J. Appl. Phys. 114, 113104 (2013) A light emitting active region with three InGaAs quantum wells is monolithically integrated with a GaAs hemisphere as a means to increase the extraction efficiency of light emitting diodes. For a device with a small active region and large hemisphere and optimal antireflection, theoretical calculations show that the extracted fraction of spontaneous emission incident on the hemisphere is greater than 99.9% and the overall extraction efficiency of the integrated device is as high as 90%.The hemisphere is fabricated with a consistent aspect ratio ͑height versus width͒ using photoresist reflow and inductive coupled plasma etching. Detailed numerical simulations are performed to predict the reflow and dry etch processes as an aid to device fabrication. The fabrication results show that near perfect GaAs hemispheres can be successfully integrated with light emitting active regions and that the resulting light emitting diodes have the potential for mass production.

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“…It has been shown that LEE can be sufficiently improved using proper micro-structures. These micro-structured LEDs include hemispherical source LEDs [6], funnel shaped LEDs [7], truncated-inverted-pyramid LEDs [8], surface textured LEDs [9], photonic crystal or grating assisted LEDs [10][11][12] and metal assisted LEDs [13][14][15][16][17]. The LEE improvements mostly rely on clever geometrical optical designs, which do not change the properties of spontaneous emission.…”

Section: Introductionmentioning

confidence: 99%