One-dimensional Steeplechase for Electrons Realized

Abstract

We report growth of one-dimensional semiconductor nanocrystals, nanowhiskers, in which segments of the whisker with different composition are formed, illustrated by InAs whiskers containing segments of InP. Our conditions for growth allow the formation of abrupt interfaces and heterostructure barriers of thickness from a few monolayers to 100s of nanometers, thus creating a one-dimensional landscape along which the electrons move. The crystalline perfection, the quality of the interfaces, and the variation in the lattice constant are demonstrated by high-resolution transmission electron microscopy, and the conduction band off-set of 0.6 eV is deduced from the current due to thermal excitation of electrons over an InP barrier.

InAs nanowire metal-oxide-semiconductor capacitors

“…1,2 NWs allow the integration of semiconductor materials with reduced lattice-matching constraints 3,4 and offer the intriguing possibility of growing III-V structures on Si substrates, thus introducing high-mobility and optically active elements on a Si platform. 5 However, many of the key parameters of the NWs such as doping level and carrier distribution are still difficult to determine in a direct and conclusive way.…”

Transition region width of nanowire hetero- and pn-junctions grown using vapor–liquid–solid processes

“…Thus, extensive studies have been performed on the preparation, property, and growth kinetics of nanowires and nanowire structures with either hetero-or pn-junctions [1][2][3][4][5][6][7][8][9]. Nanowire heterojunction structures of various semiconductors have been fabricated, e.g., Si-Ge [3][4][5], GaAs-InAs [6] and GaP-GaAs [7,8].…”

The 2008 Kavli Prize in Nanoscience: Carbon Nanotubes

“…44 Since then, Lieber and others have demonstrated the syntheses of a wide range of NW materials, including heterostructures (Figure 4) [45][46][47] with advanced and well-defined functionalities and properties while controllably assembling them into hierarchical structures ( Figure 5) and configuring them for a wide range of applications. [48][49][50][51][52][53][54][55][56][57][58][59][60][61][62][63][64][65][66] Properties and Applications.…”