One-dimensional single crystalline antimony sulfur iodide, SbSI

Fast and low-temperature synthesis of one-dimensional (1D) single-crystalline SbSI microrod for high performance photodetector

“…19,20 In detail, the values of n is dened as 2 or 2/3 for a direct or direct forbidden transition semiconductor, respectively, and n is determined to be 1/2 or 1/ 3 for the indirect allowed or indirect forbidden semiconductor, respectively. Hence, the E g values of the SbSI microrods can be determined as 1.80 eV, which is in agreement with the results of the previous reports, 12,14,20,22 conrming its promising applications in photoelectric devices. 21 The plot of (ahn) 1/3 versus hn is shown in the inset of Fig.…”

“…4,5 It is highly anisotropic orthorhombic phase structure which consists of innite ribbon-like SbSI polar chains linked together and extend along c-axis, making its crystal preferentially to grow into one-dimensional (1D) structure anisotropically. 4,[7][8][9][10][11][12] As noted, chemical vapor deposition (CVD) is available for the growth of poly-crystalline bulk from their corresponding elements at temperature over 600 C, 7 and sonochemical process can produce SbSI at a relative low temperature below 100 C while the surface of the as-grown nanocrystals oen shows an amorphous layer. 4,[7][8][9][10][11][12] As noted, chemical vapor deposition (CVD) is available for the growth of poly-crystalline bulk from their corresponding elements at temperature over 600 C, 7 and sonochemical process can produce SbSI at a relative low temperature below 100 C while the surface of the as-grown nanocrystals oen shows an amorphous layer.…”

“…However, it is noted that the hydrothermal processes for the synthesis of the 1D SbSI crystals usually need high reaction temperature over 250 C in addition to extra high pressure in previous investigations. 12 The photoelectric property of SbSI has been studied as early in 1958, 13 and it is conrmed that bulk SbSI has a band gap from 1.82 to 1.84 eV at about 300 K, 12,14 which would be available for promising photodetection at least in visible light region. Meanwhile, another modication was also available for the growth of the SbSI crystals from sources of SbCl 3 , (NH 2 ) 2 CS with excessive elemental iodine and it was interesting that the reaction conditions could be reduced to 180-190 C for 8-10 h. 11 Since then, there have not been any investigations reported on the synthesis of SbSI crystals via hydrothermal fabrication routes until recent years.…”

Controlled growth of SbSI thin films from amorphous Sb2S3 for low-temperature solution processed chalcohalide solar cells

“…In addition, the SbSI is thermally instable at high temperatures of ≥250 • C due to the property that SbSI easily decomposes into Sb 2 S 3 and SbI 3 at such high temperatures. 31,32 Therefore, the Sb 2 S 3 phase can be preferentially formed at temperatures of 250 and 300 • C. Pure phase SbSI cannot be obtained from crystalline Sb 2 S 3 films even if the SbI 3 step (step II) is performed, as shown in Fig. S3.…”

Growth of large SbSI crystals

“…The main properties of SbSI were reviewed in a few monographs [1][2][3][4][5][6]. However, the properties of this material have been still investigated [7][8][9][10][11][12][13]. Due to these properties, SbSI is an attractive and suitable material for thermal imaging [3,4,[14][15][16][17], light modulators [3,4,18], ferroelectric field effect transistors (FeFET) [19,20], gas sensors [21], piezoelectric elements used in certain types of electromechanical transducers [4,[22][23][24], temperature autostabilized nonlinear dielectric elements (TANDEL) [25,26], time-controlling devices [3,4,27] and other applications.…”