Growth of large SbSI crystals

Abstract

In this paper a novel method of SbSI single crystals fabrication is presented. In this method a sonochemically prepared SbSI gel is used as an intermediate product in a vapour growth process. The main advantages of the presented technique are as follows. First, the SbSI gel source material has lower temperature of sublimation and allows to avoid explosions during SbSI synthesis (the sonochemical synthesis is free of any explosion hazard). Second, but not least, the grown SbSI single crystals have smaller ratio of longitudinal and lateral dimensions. The cross sections of the presented crystals are relatively large (they are up to 9 mm 2 ). The crystals have been characterized by X-ray diffraction, angle-resolved optical spectroscopy, and diffusive reflectivity.

SbSI microrod based flexible photodetectors

“…The ternary V-VI-VII compound SbSI is a very interesting material with piezoelectric, pyroelectric, ferroelectric, optoelectronic and other properties [9][10][11][12][13][14][15][16], and the known maximum Curie temperature of 22 • C [17]. SbSI is an n-type semiconductor with an indirect band gap of 1.8-1.9 eV (at room temperature) [9,[18][19][20], which can be used for light detection in the visible range.…”

Electrical Property Analysis of Textured Ferroelectric Polycrystalline Antimony Sulfoiodide Using Complex Impedance Spectroscopy

“…The needle-like morphology was found to be predominant due to the specific inherent characteristics of the SbSI growth rate anisotropy; accordingly, it is difficult to grow good quality large single crystals or films [ 22 , 23 , 24 ]. The spontaneous polarization direction is parallel to the longitudinal c -axis of a crystalline needle; therefore, polarization characteristics are unmeasurable in untextured ceramics [ 25 ].…”