One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires

Tian, Yongtao; Sakr, M. R.; Kinder, Jesse M.; Liang, Dong; MacDonald, M. J.; Qiu, Richard L.J.; Gao, Hong; Gao, Xuan

doi:10.1021/nl304194c

Cited by 174 publications

(173 citation statements)

References 36 publications

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“…Therefore, modulation doping techniques [16,17], or gated channels [18,19,20,21,22], that provide high carrier densities without direct doping could prove beneficial to the channel's thermoelectric properties. Such works have indeed demonstrated strong electric field modulation of the conductivity and thermopower [16,17,18,19,20,21,22].…”

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confidence: 99%

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Gated Si nanowires for large thermoelectric power factors

Neophytou

Kosina

2014

Applied Physics Letters

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We investigate the effect of electrostatic gating on the thermoelectric power factor of p-type Si nanowires (NWs) of up to 20nm in diameter in the [100], [110] and [111] crystallographic transport orientations. We use atomistic tight-binding simulations for the calculation of the NW electronic structure, coupled to linearized Boltzmann transport equation for the calculation of the thermoelectric coefficients. We show that gated NW structures can provide ~5x larger thermoelectric power factor compared to doped channels, attributed to their high hole phonon-limited mobility, as well as gating induced bandstructure modifications which further improve mobility. Despite the fact that gating shifts the charge carriers near the NW surface, surface roughness scattering is not strong enough to degrade the transport properties of the accumulated hole layer. The highest power factor is achieved for the [111] NW, followed by the [110], and finally by the [100] NW. As the NW diameter increases, the advantage of the gated channel is reduced. We show, however, that even at 20nm diameters, (the largest ones that we were able to simulate), a ~3x higher power factor for gated channels is observed. Our simulations suggest that the advantage of gating could still be present in NWs with diameters of up to ~40nm.

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“…The experimental works in Refs [18,19,20,21,22], however, consider thick structures, in which a high mobility transport layer is formed only along the structure's surfaces, whereas the volume of the channel remains mostly inert. In the best case, they report power factors similar to those of doped bulk materials [18].…”

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confidence: 99%

Gated Si nanowires for large thermoelectric power factors

Neophytou

Kosina

2014

Applied Physics Letters

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“…Several recent studies suggested techniques to avoid transport in the presence of IIS have been proposed, such as modulation doping techniques [46,47], or gating the channel materials [48,49,50,51,52,53]. In this way, the high carrier densities can be achieved without the use of direct doping, and the phonon-limited performance would be…”

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confidence: 99%

Prospects of low-dimensional and nanostructured silicon-based thermoelectric materials: findings from theory and simulation

Neophytou

2015

Eur. Phys. J. B

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Original citation: Neophytou, Neophytos. (2015) Prospects of low-dimensional and nanostructured siliconbased thermoelectric materials : findings from theory and simulation. The European Physical Journal B, 88 (4). Permanent WRAP url:http://wrap.warwick.ac.uk/77435 Copyright and reuse:The Warwick Research Archive Portal (WRAP) makes this work by researchers of the University of Warwick available open access under the following conditions. Copyright © and all moral rights to the version of the paper presented here belong to the individual author(s) and/or other copyright owners. To the extent reasonable and practicable the material made available in WRAP has been checked for eligibility before being made available.Copies of full items can be used for personal research or study, educational, or not-for profit purposes without prior permission or charge. Provided that the authors, title and full bibliographic details are credited, a hyperlink and/or URL is given for the original metadata page and the content is not changed in any way. Publisher's statement:"The final publication is available at Springer via http://dx.doi.org/10.1140/epjb/e2015-50673-9 " A note on versions:The version presented here may differ from the published version or, version of record, if you wish to cite this item you are advised to consult the publisher's version. Please see the 'permanent WRAP url' above for details on accessing the published version and note that access may require a subscription. AbstractSilicon based low-dimensional materials receive significant attention as new generation thermoelectric materials after they have demonstrated record low thermal conductivities. Very few works to-date, however, report significant advances with regards to the power factor. In this review we examine possibilities of power factor enhancement in: i) low-dimensional Si channels and ii) nanocrystalline Si materials. For low-D channels we use atomistic simulations and consider ultra-narrow Si nanowires and ultra-thin Si layers of feature sizes below 15nm. Room temperature is exclusively considered. We show that, in general, low-dimensionality does not offer possibilities for power factor improvement, because although the Seebeck coefficient could slightly increase, the conductivity inevitably degrades at a much larger extend. The power factor in these channels, however, can be optimized by proper choice of geometrical parameters such as the transport orientation, confinement orientation, and confinement length scale. Our simulations show that in the case where room temperature thermal conductivities as low as κl=2 W/mK are achieved, the ZT figure of merit of an optimized Si lowdimensional channel could reach values around unity. For the second case of materials, we show that by making effective use of energy filtering, and taking advantage of the inhomogeneity within the nanocrystalline geometry, the underlying potential profile and dopant distribution, large improvements in the thermoelectric power factor can be achieved. The paper is intended...

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“…Annl et al reported that the thermal conductivity of InAs NW could be significantly reduced by embedding polymethylmethacrylate (PMMA) in InAs NW array [14]. Yuan et al realized the gate-controlled thermoelectric properties of InAs NWs [15]. However, the characterization of thermal conductivity in air has not been reported for InAs NWs, which is particularly important for applications in thermoelectric device.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Diameter-dependent Thermal Conductivity of InAs Nanowires

et al. 2014

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In this work, we synthesized high-quality InAs nanowires by a convenient chemical vapor deposition method, and developed a simple laser heating method to measure the thermal conductivity of a single InAs nanowire in air. During the measurement, a focused laser was used to heat one end of a freely suspended nanowire, with its other end embedded into a carbon conductive adhesive. In order to obtain the thermal conductivity of InAs nanowires, the heat loss in the heat transfer process was estimated, which includes the heat loss through air conduction, the heat convection, and the radiation loss. The absorption ratio of the laser power in the InAs nanowire was calculated. The result shows that the thermal conductivity of InAs nanowires monotonically increases from 6.4 W m -1 K -1 to 10.5 W m -1 K -1 with diameters increasing from 100 nm to 190 nm, which is ascribed to the enhanced phonon-boundary scattering.

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One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires

Cited by 174 publications

References 36 publications

Gated Si nanowires for large thermoelectric power factors

Gated Si nanowires for large thermoelectric power factors

Prospects of low-dimensional and nanostructured silicon-based thermoelectric materials: findings from theory and simulation

Synthesis and Diameter-dependent Thermal Conductivity of InAs Nanowires

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