One-dimensional Germanium Nanowires for Future Electronics

Disorder induced interface states and their influence on the Al/Ge nanowires Schottky devices

“…The large value of the localization length could be a manifestation of a change in the nature or in the type of localization centers through which the conduction occurs. 29 As revealed by the TEM analysis, the surface of germanium nanowires is naturally covered by a thin oxide layer produced during the synthesis process but also due to the contact to the atmosphere. As above mentioned, the Ge/GeO x interface is disordered due to its nature, and it induces a disordered potential that should affect the conduction of electrons inside the Ge nanowires.…”

In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices

“…1 Structurally stable Ge NWs can be synthetically produced with high yield and good control over the diameter size. 2,3 In order to achieve successful integration of Ge NWs into functional devices, means of controlled doping have to be established and evaluated.…”

The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate

“…This capability to control the nanowire growth direction would be very important in engineering the transport characteristics for electrons and holes separately to get the best switching performance of a complementary logic circuit configuration. 19 Also it is quite attractive for future large-scale nanowire integration.…”