On transition temperatures in the plasticity and fracture of semiconductors

Deformation-induced phase transformation in 4H–SiC nanopillars

“…Similar to most ceramics with a relatively limited tensile strain (less than 0.1%), bulk SiC is brittle at room temperature [18]. With the advancement of materials processing technology, micro-and nanoscale SiC components can be easily produced and they demonstrate promising applications in micro-and nanoelectromechanical systems [19].…”

Instrumented nanoindentation investigation into the mechanical behavior of ceramics at moderately elevated temperatures

“…For the Burgers vector, a value of 0.154 nm was used as the flow in SiC is assumed to be by partial dislocations. 35,57,58 The attempt frequency was again taken to be 10 11 s…”

Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC

“…13 The BPDs generated from a micropipe in basal plane slip system h11 " 20i (0001) can have different character, i.e., different angles between their Burgers vectors and line directions. It is well known that the mobility of non-screw dislocations is higher than that of screw dislocations in SiC, 2 and thus non-screw BPDs move more easily in response to stress above a certain temperature. Therefore, non-screw dislocations generated from the micropipe are seldom observed in the background of the images of our area of interest.…”

“…An active area of research is the origin and expansion of stacking faults in SiC. Although named differently from group to group, three types of stacking faults according to their fault vectors have been reported: Shockley fault with fault vector of a/3 h1 " 100i type, [2][3][4] Frank fault with fault vector of (c/2) [0001] or (c/4) [0001], 5 and those comprising some kind of combination of the previous two. [6][7][8][9][10] Among these faults, Shockley faults have been shown to be associated with the degradation of power devices, as the expansion of such faults in the junction area can impede current flow and, as a result, increase the on-state resistance.…”

“…Below the BDT, the C-core partial becomes sessile and thus the Shockley fault can expand as the mobile Sicore partial glides. 2 Another mechanism of fault expansion in SiC crystals is related to the existence of threading dislocations with Burgers vectors of c + a. 4,11,12 It is postulated that two partials associated with the a-component of the dislocation are separated by a surface step associated with the c-component of the deflected c + a dislocation, causing one to be sessile and the other glissile.…”