2014
DOI: 10.1016/j.actamat.2014.07.055
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Deformation-induced phase transformation in 4H–SiC nanopillars

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Cited by 17 publications
(12 citation statements)
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“…At 60 nm, σ max will exceed σ c resulting a possible cleavage fracture in 3C‐SiC sample (see Figure ). Additionally to find the nature of nucleation (homogeneous or heterogeneous) comparison between τ CRSS and τ th is performed by:normalτCRSS=0.31][6PcrEr2normalπ3R21/3…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…At 60 nm, σ max will exceed σ c resulting a possible cleavage fracture in 3C‐SiC sample (see Figure ). Additionally to find the nature of nucleation (homogeneous or heterogeneous) comparison between τ CRSS and τ th is performed by:normalτCRSS=0.31][6PcrEr2normalπ3R21/3…”
Section: Resultsmentioning
confidence: 99%
“…Despite substantial efforts, elastic‐plastic deformation and transition behaviors of 3C‐SiC at the nanoscale are not properly understood. Recently, deformation mechanisms at nano‐scales of other polytypes which includes amorphous, 4H and 6H–SiC have been studied . Besides, this study will also help in designing of nanoscale piezo electric, resistive and biomedical devices and sensors.…”
Section: Introductionmentioning
confidence: 97%
“…As is the case with all refractory ceramics, high-temperature mechanical behavior of bulk SiC is relatively well documented; 76-82 existing room-temperature indentation tests [83][84][85] conducted on bulk SiC single crystals and fracture tests 86,87 performed on submicrometer-scale SiC crystals, such as nanorods and nanowires, have helped determine the effects of indenter geometry, crystal size, and crystal orientation on the room-temperature mechanical properties of SiC. Recent in situ transmission and scanning electron microscopy (TEM and SEM) based uniaxial tension and compression of a and b crystalline polytypes of SiC (e.g., 3C, 4H, and 6H structures), coupled with first principles calculations and simulations, [59][60][61]87,88 helped identify the role of crystal size and defect density on the mechanical behavior in SiC and demonstrated room-temperature plasticity, a direct indication of dislocation motion in SiC. In situ microscopy experiments revealed that dislocation motion is indeed possible at room temperature in SiC, although at applied stresses considerably higher than those typically required to fracture bulk SiC crystals.…”
Section: Introductionmentioning
confidence: 99%
“…23−28,35−42,49−53 Third, the atomic-scale in situ results combined with MD simulations reveal that the deformation of 4H-structured NRBs comprises three distinct stages, which has not been reported before. [23][24][25][26][27][28][35][36][37][38][39]54,55 Plasticity is first governed by full dislocation activities. Subsequently, partial dislocation activities occur at regions that have undergone full dislocation gliding, leading to the 4H to FCC phase transformation.…”
Section: Resultsmentioning
confidence: 99%