On the wear mechanism of thin nickel film during AFM-based scratching process using molecular dynamics

Hm, Khan; Kim, Sung-Gaun

doi:10.1007/s12206-011-0606-6

Cited by 17 publications

(6 citation statements)

References 34 publications

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“…It was employed to describe the interaction between the copper atoms. [29][30][31] The total atomic energy of an EAM potential system was expressed as:…”

Section: Simulation Modelmentioning

confidence: 99%

Movement patterns of ellipsoidal particles with different axial ratios in three-body abrasion of monocrystalline copper: a large scale molecular dynamics study

et al. 2017

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“…It was employed to describe the interaction between the copper atoms. [29][30][31] The total atomic energy of an EAM potential system was expressed as:…”

Section: Simulation Modelmentioning

confidence: 99%

Movement patterns of ellipsoidal particles with different axial ratios in three-body abrasion of monocrystalline copper: a large scale molecular dynamics study

et al. 2017

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“…The rigid TIP4P interaction model [24,25] is used for the condensed water film. The Cu-O and C-O interactions are defined by the Lennard-Jones potential, and the Lorentz-Berthelot mixing rules [17,26] are used to generate the relevant parameters as listed in Table S1 (in the ESM).…”

Section: Simulation Methodologymentioning

confidence: 99%

Surface removal of a copper thin film in an ultrathin water environment by a molecular dynamics study

et al. 2019

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The surface planarity and asperity removal behavior on atomic scale in an ultrathin water environment were studied for a nanoscale process by molecular dynamics simulation. Monolayer atomic removal is achieved under both noncontact and monoatomic layer contact conditions with different water film thicknesses. The newly formed surface is relatively smooth without deformed layers, and no plastic defects are present in the subsurface. The nanoscale processing is governed by the interatomic adhering action during which the water film transmits the loading forces to the Cu surface and thereby results in the migration and removal of the surface atoms. When the scratching depth ≥ 0.5 nm, the abrasive particle squeezes out the water film from the scratching region and scratches the Cu surface directly. This leads to the formation of trenches and ridges, accumulation of chips ahead of the particles, and generation of dislocations within the Cu substrate. This process is mainly governed by the plowing action, leading to the deterioration of the surface quality. This study makes the "0 nm planarity, 0 residual defects, and 0 polishing pressure" in a nanoscale process more achievable and is helpful in understanding the nanoscale removal of materials for developing an ultra-precision manufacture technology.

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“…The C-C interaction was omitted because of the treatment of rigid body. The rigid TIP4P model [21,22] was applied to simulate the condensed phase of water film. The interactions of H atoms in water molecules with other types of atoms were neglected due to the weak influence of H atoms [17].…”

Section: Simulation Methodologymentioning

confidence: 99%

Surface Removal of Copper Thin Film under the Ultrathin Water Environment for Nanoscale Process

Shi¹,

Peng²,

Chen³

et al. 2018

Preprint

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The surface planarity and asperity removal behaviors of atomic scale under the ultrathin water environment was studied for the nanoscale process by molecular dynamics simulation. The monolayer atomic removal was achieved under the noncontact and monoatomic layer contact conditions with different water film thickness, and the newly formed surface is relatively smooth and no deformed layer and plastic defects exist. The nanoscale processing is governed by the interatomic adhering action during which the water film transmits the loading forces to Cu surface and thereby result in the migration and removal of surface atoms. With scratching depth ≥ 0.5 nm, the abrasive particle squeezed out the water film from scratching region and scratched Cu surface directly, leading to the surface quality deterioration mainly governed by the plowing action. This study brings the goals of “0 nm planarity, 0 residual defects and 0 polishing pressure” closer to us in the nanoscale process for the development of ultra-precision manufacture technology.

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On the wear mechanism of thin nickel film during AFM-based scratching process using molecular dynamics

Cited by 17 publications

References 34 publications

Movement patterns of ellipsoidal particles with different axial ratios in three-body abrasion of monocrystalline copper: a large scale molecular dynamics study

Movement patterns of ellipsoidal particles with different axial ratios in three-body abrasion of monocrystalline copper: a large scale molecular dynamics study

Surface removal of a copper thin film in an ultrathin water environment by a molecular dynamics study

Surface Removal of Copper Thin Film under the Ultrathin Water Environment for Nanoscale Process

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