On the Use of Luminescence Intensity Images for Quantified Characterization of Perovskite Solar Cells: Spatial Distribution of Series Resistance

Walter, Daniel; Wu, Yiliang; Peng, Jun; Jiang, Liangcong; Fong, Kean Chern; Weber, Klaus

doi:10.1002/aenm.201701522

Cited by 32 publications

(31 citation statements)

References 51 publications

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“…A 508 nm diode laser (DD‐510L, Horiba) with pulse duration of 110 ps, microjoules per fluence of ≈10 cm 2 pulse –1 , and a repetition rate of 312.5 kHz was used for excitation. Photoluminescence images of PSCs were taken following the procedure reported in our previous work . In short, the illumination is provided by Lumileds blue light LEDs with a peak wavelength of emission of 450 nm filtered through Semrock FF01‐451 band‐pass filters (400– 500 nm).…”

Section: Methodsmentioning

confidence: 99%

“…Photoluminescence images of PSCs were taken following the procedure reported in our previous work. [39] In short, the illumination is provided by Lumileds blue light LEDs with a peak wavelength of emission of 450 nm filtered through Semrock FF01-451 band-pass filters (400-500 nm). Images were captured using a Princeton Instruments Pixis 1024 camera with a Peltier-cooled (−70 °C) silicon CCD detector.…”

Section: Methodsmentioning

confidence: 99%

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High Efficiency Perovskite‐Silicon Tandem Solar Cells: Effect of Surface Coating versus Bulk Incorporation of 2D Perovskite

Pham

Kho

Phang

et al. 2020

Advanced Energy Materials

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116

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Mixed‐dimensional perovskite solar cells combining 3D and 2D perovskites have recently attracted wide interest owing to improved device efficiency and stability. Yet, it remains unclear which method of combining 3D and 2D perovskites works best to obtain a mixed‐dimensional system with the advantages of both types. To address this, different strategies of combining 2D perovskites with a 3D perovskite are investigated, namely surface coating and bulk incorporation. It is found that through surface coating with different aliphatic alkylammonium bulky cations, a Ruddlesden–Popper “quasi‐2D” perovskite phase is formed on the surface of the 3D perovskite that passivates the surface defects and significantly improves the device performance. In contrast, incorporating those bulky cations into the bulk induces the formation of the pure 2D perovskite phase throughout the bulk of the 3D perovskite, which negatively affects the crystallinity and electronic structure of the 3D perovskite framework and reduces the device performance. Using the surface‐coating strategy with n‐butylammonium bromide to fabricate semitransparent perovskite cells and combining with silicon cells in four‐terminal tandem configuration, 27.7% tandem efficiency with interdigitated back contact silicon bottom cells (size‐unmatched) and 26.2% with passivated emitter with rear locally diffused silicon bottom cells is achieved in a 1 cm2 size‐matched tandem.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

High Efficiency Perovskite‐Silicon Tandem Solar Cells: Effect of Surface Coating versus Bulk Incorporation of 2D Perovskite

Pham

Kho

Phang

et al. 2020

Advanced Energy Materials

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116

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“…Recently, luminescence imaging has increased in significance for perovskite device and material characterization. Many works have extracted various device parameters of PSCs such as correlations between luminescence intensities and open‐circuit voltages, spatial distributions of nonradiative recombination centers, series resistances from EL images, and lateral inhomogeneities on each subcell in monolithic perovskite‐silicon tandem structures . It is also a powerful tool for monitoring long‐term performance and stability of PSCs .…”

Section: Introductionmentioning

confidence: 99%

Imaging Spatial Variations of Optical Bandgaps in Perovskite Solar Cells

Chen

Peng

Shen

et al. 2018

Advanced Energy Materials

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their optical and electrical properties. A common optical-based approach to estimate bandgaps of direct-gap semiconductors is to employ absorption spectroscopy. In this approach, one captures absorption spectra of materials and obtains absorption thresholds from Tauc plots. [3] The Tauc analysis provides a consistent way to compare among materials. However, as mentioned by Green et al., [4] these thresholds represent optical bandgaps, not electronic bandgaps, as the Tauc analysis underestimates the presence of excitonic transitions and broadening factors such as temperatures, defect densities, and material disorders. [4,5] Alternatively, one can capture the so-called band-to-band luminescence spectra from materials, which are results of radiative recombination between free electrons and holes in the conduction and valence bands, respectively. The peak wavelengths (or energies) of the luminescence spectra have been reported to be close to the absorption thresholds at room temperature by numerous authors [6][7][8][9][10] (also see Figure S1, Supporting Information). Thus, the two optical methods can be used to estimate the material optical bandgap although they often underestimate the true electronic bandgap. However, both of these approaches measure the spatially average optical bandgap over a certain area. Therefore, capturing spatially resolved optical bandgaps of the entire sample area requires point-by-point mapping in both X and Y directions, and thus it is time consuming and impractical for large-area device imaging or high-throughput production-line environments.In PV research and manufacturing, luminescence imaging, including both electroluminescence (EL) and photoluminescence (PL), is a mainstream characterization tool for crystalline silicon solar cells. [11][12][13][14][15][16][17] This camera-based method can provide fast diagnostics of PV materials and devices with micrometerscale spatial resolution. Recently, luminescence imaging has increased in significance for perovskite device and material characterization. Many works have extracted various device parameters of PSCs such as correlations between luminescence intensities and open-circuit voltages, [18][19][20] spatial distributions of nonradiative recombination centers, [21,22] series resistances from EL images, [23] and lateral inhomogeneities on each subcell in monolithic perovskite-silicon tandem structures. [24] It is also a powerful tool for monitoring long-term performance and A fast, nondestructive, camera-based method to capture optical bandgap images of perovskite solar cells (PSCs) with micrometer-scale spatial resolution is developed. This imaging technique utilizes well-defined and relatively symmetrical band-to-band luminescence spectra emitted from perovskite materials, whose spectral peak locations coincide with absorption thresholds and thus represent their optical bandgaps. The technique is employed to capture relative variations in optical bandgaps across various PSCs, and to resolve optical bandgap inhomogeneity within the same d...

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“…In Figure 2a,b, the photoluminescence measured at different light intensities, while keeping the device at open circuit, and the electroluminescence at different applied potentials corrected for the potential drop at the serial resistance R s (25 Ω) are shown. [23,24] The serial resistance was estimated by analyzing the current-voltage curves of the investigated solar cell recorded at different light intensities. A fundamental correlation between the luminescence intensity and the open-circuit voltage is predicted by the generalized Planck equation.…”

Section: Resultsmentioning

confidence: 99%

Optoelectronic Properties of Layered Perovskite Solar Cells

et al. 2019

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Herein, the optoelectronic properties of interface‐engineered perovskite 2D|3D‐heterojunction structure solar cells are reported. The reciprocity theorem is applied to determine the maximum open‐circuit voltage (Voc) the device can deliver under solar illumination. A Voc of 1.295 V is found, analyzing the measured external quantum efficiency and assuming only radiative recombination. For comparison, the experimental open‐circuit voltage found for the studied 2D|3D heterojunctions is 1.15 V. The contribution of nonradiative recombination is explored by measuring the electroluminescence quantum yield. A quantum yield of 0.4% is found at current densities equivalent to 1 sun illumination. This translates into a Voc loss of ≈140 mV, which is in very good agreement with the experimental findings. In addition, the fundamental correlation between luminescence intensity and the chemical potential predicted by the generalized Planck law is confirmed for the photoluminescence measured at different light intensities when the device is operated under open‐circuit conditions and for the electroluminescence when operated under a forward bias. The investigations in this study suggest that further efficiency improvements can be achieved by reducing the nonradiative recombination in the studied solar cell. At the same time, a high‐performance near IR light emitting diode can be realized.

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On the Use of Luminescence Intensity Images for Quantified Characterization of Perovskite Solar Cells: Spatial Distribution of Series Resistance

Cited by 32 publications

References 51 publications

High Efficiency Perovskite‐Silicon Tandem Solar Cells: Effect of Surface Coating versus Bulk Incorporation of 2D Perovskite

High Efficiency Perovskite‐Silicon Tandem Solar Cells: Effect of Surface Coating versus Bulk Incorporation of 2D Perovskite

Imaging Spatial Variations of Optical Bandgaps in Perovskite Solar Cells

Optoelectronic Properties of Layered Perovskite Solar Cells

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