On the temperature and field dependences of the effective surface mobility in MIS structures

Features of electron mobility in a thin silicon layer in an insulator-silicon-insulator structure

“…The observed decrease in U H is certainly related to a drop in electron mobility in high transverse fields as was discussed in Introduction. This conclusion is confirmed by a quantitative com parison of our data with calculated results reported in [6]. In particular, for curve 1 in Fig.…”

“…These mea surements are consistent with the calculated depen dence of surface electron mobility in silicon on the field strength in the oxide of a MOS structure at room temperature (see Fig. 4 in [6]). It is obvious that the maximum Hall voltage at a specified supply voltage corresponds to the maximum electron mobility in the silicon operating layer.…”

“…The issue of the effect of the electric field on carrier mobility in MOS structures at different temperatures have been repeatedly considered [4][5][6]. It was shown that, with decreasing temperature, the effect of the field on mobility becomes less pronounced.…”

“…In a wide tempera ture range (from that of helium to room), this depen dence is of the extreme type with smaller values in both low temperature and high temperature regions, and mobility values significantly depending on the silicon doping level [3]. The behavior of surface carrier mobil ity in MOS structures in dependence on the electric field strength at different temperatures was thoroughly analyzed in studies [4][5][6].…”

“…In particular, electron mobil ity starts to decrease at electric field strengths higher than 3 kV/cm [3]. Since oxide layer thicknesses in MOS transistors are usually no larger than 10 -5 cm, at a gate bias of only several volts the transverse electric field at the SiO 2 /Si interface becomes high and deter mines the value of the surface carrier mobility [4][5][6].…”