Electron mobility in a thin silicon layer of a metal-insulator-semiconductor-insulator-metal system is studied as a function of longitudinal and transverse electric fields (in wide ranges of their values), temperature in the range 1.7 to 400 K, and changes in γ ray irradiation conditions. It is shown that, in the temperature range 400 to ~100 K, electron mobility increases in accordance with the mechanism of electron scattering at an acoustic phonon, while, with a subsequent decrease in temperature to the temperature of liq uid helium, mobility drops because the Coulomb scattering of electrons at charged surface centers starts to dominate. It is demonstrated that as a result of γ ray irradiation, electron mobility decreases and the degree of this decrease strongly depends on the electrical mode of the sensor during irradiation.
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