On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs

Device and Circuit Level Performance Comparison of Tunnel FET Architectures and Impact of Heterogeneous Gate Dielectric

“…Moreover, the agreement between the characteristics obtained through Drift Diffusion model (with ATLAS default parameters) and the Monte Carlo (MC) results [24] are quite good for transistors down to 40 nm gate lengths. Thus, the conventional drift diffusion (DD) model is used, which happens to be less time consuming as well.…”

A Subthreshold Swing Model for Symmetric Double-Gate (DG) MOSFETs with Vertical Gaussian Doping

“…Following [26], Jankovic et al [27] have modified ATLAS default model parameter beta and vsat.n by setting beta=1 and …”

Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results

“…The DD model is the simplest and computationally most efficient approach but neglects nonstationary carrier transport and underestimates the on-currents of short-gate MOSFETs relative to experiments [5] and MC simulations [6,7]. The HD model takes nonstationary carrier transport effects into account by assuming that the carrier velocity depends on the local carrier temperature (i.e., on the local carrier energy) but tends to overestimate velocity overshoot and drain currents [6][7][8][9]. The MC method [6,7], which is based on an indirect solution of the Boltzmann transport equation, is frequently considered the most accurate approach.…”

“…The HD model takes nonstationary carrier transport effects into account by assuming that the carrier velocity depends on the local carrier temperature (i.e., on the local carrier energy) but tends to overestimate velocity overshoot and drain currents [6][7][8][9]. The MC method [6,7], which is based on an indirect solution of the Boltzmann transport equation, is frequently considered the most accurate approach. The enhanced accuracy comes, however, at the expense of significantly enhanced computational cost.…”

“…Drain currents very close to those obtained with MC have been calculated recently with modified DD models by adjusting the parameters of the velocity saturation characteristics. Adjusted parameters for DD-based simulations of conventional bulk MOSFETs with gate lengths ranging from 40 to 150 nm [10] and for double-gate MOSFETs with gate lengths down to 10 nm [7] have been presented. This method has successfully been applied to the optimization of 25-nm double-gate MOSFETs [11,12].…”