2016
DOI: 10.1088/0953-8984/28/15/156001
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On the structural origin of the single-ion magnetic anisotropy in LuFeO3

Abstract: The electronic structure for the conduction bands of both hexagonal and orthorhombic LuFeO3 thin films have been measured using x-ray absorption spectroscopy at oxygen K (O K) edge. Dramatic differences in both the spectral features and the linear dichroism are observed. These differences in the spectra can be explained using the differences in crystal field splitting of the metal (Fe and Lu) electronic states and the differences in O 2p-Fe 3d and O 2p-Lu 5d hybridizations. While the oxidation states have not … Show more

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Cited by 22 publications
(20 citation statements)
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“…21 For o-LuFeO 3 , the absorption spectra always show two peaks, in the region of 708 to 712 eV, corresponding to the e g and t 2g crystal field states, independent of polarization of X-ray. 16,17 Therefore, there is a clear correlation between lattice structure and X-ray absorption spectra in LuFeO 3 . 18 In particular, with s-polarized X-ray, the difference between the absorption spectra of h-LuFeO 3 and o-LuFeO 3 is significant, an aid for distinguishing the two structural phases.…”
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confidence: 99%
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“…21 For o-LuFeO 3 , the absorption spectra always show two peaks, in the region of 708 to 712 eV, corresponding to the e g and t 2g crystal field states, independent of polarization of X-ray. 16,17 Therefore, there is a clear correlation between lattice structure and X-ray absorption spectra in LuFeO 3 . 18 In particular, with s-polarized X-ray, the difference between the absorption spectra of h-LuFeO 3 and o-LuFeO 3 is significant, an aid for distinguishing the two structural phases.…”
mentioning
confidence: 99%
“…1 Hexagonal LuFeO 3 (001) films were grown on Al 2 O 3 (0001) substrates using pulsed laser deposition at 750 C in a 5 mTorr oxygen environment. 1, [16][17][18] To test the thermal stability of hexagonal LuFeO 3 , we carried out a sequence of annealing on a film sample of $40 nm thickness. For each annealing step, the temperature was raised slowly (5 C/min) from room temperature to the annealing temperature (T A ) and then annealed at that temperature for 3 h, followed by a slow cooldown (5 C/min) to room temperature.…”
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