On the structural and electrical characteristics of zinc oxide thin films

Prepelita, Petronela; Medianu, R.; Garoi, F.; Stefan, N.; Iacomi, Felicia

doi:10.1016/j.tsf.2009.12.044

Cited by 12 publications

(5 citation statements)

References 14 publications

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“…where d is the thin film thickness in cm, and T is the transmittance in % [52,53]. Plots of absorption coefficient versus wavelength are shown in Figure 5 (b).…”

Section: Optical Propertiesmentioning

confidence: 99%

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Studies on the Structure and Optical Properties of BaSrMgWO<sub>6</sub> Thin Films Deposited by A Spin Coating Method

Punga¹,

Abbassi²,

Toma³

et al. 2022

Preprint

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Highly transparent thin films with the chemical formula BaSrMgWO6 were deposited by spin coating using a solution of nitrates of Ba, Sr and Mg and ammonium paratungstate in dimethylformamide with a ratio Ba:Sr:Mg;W=1:1:1:1. XRD, SEM, EDX and XPS investigations evidenced that an annealing at 800 ºC for 1h leaves the structure amorphous with a precipitate on the surface and that a supplementary annealing at 850 ºC for 45 min forms a nanocrystalline structure and dissolves a part of precipitates. It was evidenced a textured double perovskite cubic structure (61.9%) decorated with tetragonal and cubic impurity phases (12.7 %) like BaO2, SrO2 and MgO and an under-stoichiometric phase (24.4%) with the chemical formula Ba2-(x+y) SrxMgyWO5. From transmittance measurements the values of optical band gap were estimated for the amorphous (Eg= 5.15) and nanocrystalline (Eg=4.58 eV) phases. The presence of a lattice disorder was indicated by the high values of Urbach and weak absorption tail energies A decrease in their values was observed and attributed to the crystallization process and cation redistribution.

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“…where d is the thin film thickness in cm, and T is the transmittance in % [52,53]. Plots of absorption coefficient versus wavelength are shown in Figure 5 (b).…”

Section: Optical Propertiesmentioning

confidence: 99%

“…For the optical band gap energy determination, we used the Tauc formula for the direct transition [53]:…”

Section: Optical Propertiesmentioning

confidence: 99%

Studies on the Structure and Optical Properties of BaSrMgWO<sub>6</sub> Thin Films Deposited by A Spin Coating Method

Punga¹,

Abbassi²,

Toma³

et al. 2022

Preprint

Self Cite

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“…Zinc oxide (ZnO) is a major contributor in the research field of oxide electronics and may be defined as a future material of choice. This material is suitable for fabrication of the optoelectronic [2], piezoelectric [3] and spintronics devices [4]. Nano-crystalline thin films of ZnO have already been popular for photovoltaic device applications as transparent conductive oxide (TCO) owing to its inherent transparency property [5][6][7][8] in the visible range [9][10].…”

Section: Introductionmentioning

confidence: 99%

Electrostatic force microscopy analysis of Bi0.7Dy0.3FeO3 thin films prepared by pulsed laser deposition integrated with ZnO films for microelectromechanical systems and memory applications

Bhatia¹,

Roy²,

Nawaz³

et al. 2018

MoEM

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Citation: Bhatia D, Roy S, Nawaz S, Meena RS, Palkar VR (2018) Electrostatic force microscopy analysis of Bi 0.7 Dy 0.3 FeO 3 thin films prepared by pulsed laser deposition integrated with ZnO films for microelectromechanical systems and memory applications. Modern Electronic Materials 4(2): 77-85. https://doi. AbstractIn this paper, we report the charge trapping phenomena in zinc oxide (n-ZnO) and Bi 0.7 Dy 0.3 FeO 3 (BDFO)/ZnO thin films deposited on p-type <100> conducting Si substrate. The significant change in contrast above the protrusions of ZnO verifies the possibility of heavy accumulation of injected holes in there. The ZnO and BDFO/ZnO films were characterized by the electrostatic force microscopy (EFM) to understand the phase dependence phenomenon on the bias supporting electron tunnelling. The EFM has an important role in the analysis of electrical transport mechanism characterization and electric charge distribution of local surface in nanoscale devices. It was observed that in BDFO/ ZnO, the contrast of EFM images remains constant with the bias switching and that primarily indicates availability of trap sites to host electrons. The change in contrast over the protrusions of ZnO suggests that mobility of the electrical charge carriers may be through the grain boundary. The formation of these hole-trapped sites may be assumed by bond breaking phenomenon.

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“…Various physical and chemical techniques have been employed for depositing ZnO thin films on different kind of substrates. Many of the major deposition techniques for ZnO include thermal evaporation and condensation [56], chemical vapor deposition [57], metal organic chemical vapor deposition [58], spray pyrolysis [3], electrodeposition [59], molecular beam epitaxy [60], pulsed laser deposition (PLD) [61], chemical bath deposition [62], magnetron sputtering [7], and sol-gel deposition [47]. ZnO prepared through sol-gel process is used in conjunction with other film deposition techniques like spin coating [8], dip coating [63] and direct writing [10] [11].…”

Section: Zno Thin Film Deposition and Characterization Methodsmentioning

confidence: 99%

“…These application areas are traceable to ZnO's unique properties, which include a wide direct band gap of 3.37 eV, a high excitation binding energy of 60 meV, and a high optical transmission in the visible range [1]. Patterning of ZnO and related materials are currently being studied through various depositions methods, which include physical and chemical vapor deposition [2] [3], electroless plating [4], lithographic methods [5], spray pyrolysis [6], magnetron sputtering [7], spin coating [8] as well as direct writing deposition such as inkjet printing [9], dip pen nanolithography (DPN) [10], and electrospinning [11]. These methods are typically capable of depositing high purity materials with controlled thickness and surface morphology.…”

Section: Introductionmentioning

confidence: 99%

Direct Writing of Aluminum Doped Zinc Oxide for Optoelectronic and Energy Device Applications

Abidakun¹

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Micro scale patterning of transparent conducting oxide (TCO) offers great promise in producing efficient and low cost devices. Most of the major patterning techniques are either complex, expensive, non-scalable, or involve the use of environmentally unfriendly chemicals. Therefore, patterning of Aluminum doped Zinc Oxide (AZO) via sol-gel route, combined with direct writing, in particular, nozzle-based robotic deposition, offers a relatively easy and efficient way to selectively deposit complex features in digitally precise locations, at low cost and without excessive use of harmful chemicals. However, the printing process involves the interplay of various parameters, which need to be properly related, in order to annex the inherent benefits in the manufacturing process. Hence, the focus of this work is to investigate the influence of the printing parameters, which are viscosity, nozzle size, extrusion pressure, dispensing height and writing speed on the properties of the patterned AZO feature on glass substrates. The properties of interest include geometry of deposited and sintered feature, morphology, microstructure and electrical conductivity. A dual, three factors, three levels factorial experiment was designed to determine the influence of the printing parameters on the feature geometry. The morphology and crystal structure of the sintered feature at various combinations of printing parameters were studied by scanning electron microscopy (SEM) and x-ray diffraction (XRD). Also, the electrical properties of sintered feature with and without ultraviolet (UV) light irradiation were determined in a metalsemiconductor-metal configuration using a semiconductor analyzer. It was found that the main effects and interactions among the printing parameters considered were significant in determining the spread and the profile of the deposited features at 95% confidence level. A link between the printing parameters and the morphology and crystal structure was established, providing the opportunity for tailoring the deposited film to desired end use, without altering the chemical composition or post processing treatment. The electrical property, which increased upon UV excitation, was also found to be comparable with those reported in the literature for conventionally sol-gel deposited AZO films. Given the achieved control of feature geometry and microstructure through alteration of printing parameters, and the electrical conductivity of the deposited patterns, this work provides a pathway to efficient, large area optoelectronic devices at low cost. iii ACKNOWLEDGEMENTS I would like to express my sincere gratitude to my advisor, Dr. Kostas Sierros for his guidance and support through course of this program, and for always being committed to helping me succeed. His in-depth knowledge of the subject field has help me grow professionally. My sincere appreciation goes to Dr. Samir Shoukry and Dr. Charter Stinespring for agreeing to serve in my committee. Their relentless support and timely response is highly appreciated. I tha...

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On the structural and electrical characteristics of zinc oxide thin films

Cited by 12 publications

References 14 publications

Studies on the Structure and Optical Properties of BaSrMgWO<sub>6</sub> Thin Films Deposited by A Spin Coating Method

Studies on the Structure and Optical Properties of BaSrMgWO<sub>6</sub> Thin Films Deposited by A Spin Coating Method

Electrostatic force microscopy analysis of Bi0.7Dy0.3FeO3 thin films prepared by pulsed laser deposition integrated with ZnO films for microelectromechanical systems and memory applications

Direct Writing of Aluminum Doped Zinc Oxide for Optoelectronic and Energy Device Applications

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