On the series resistance in staggered amorphous thin film transistors

Cerdeira, A.; Estrada, M.; Marsal, Lluís F.; Pallarès, Josep; Iñı́guez, Benjamı́n

doi:10.1016/j.microrel.2016.05.005

Cited by 17 publications

(7 citation statements)

References 67 publications

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“…In staggered transistors, a critical further quantity that can be estimated using TLM is the transfer length (L T ) that, along with the channel width (W), determines the area over which the majority of charge-carrier injection occurs. [76,101] In light of the discussion in the previous section, it should be noted that the key premise of the TLM, namely, that the contact resistance is Ohmic and independent of the channel length, does not necessarily hold, due to the fact that the contact resistance is inherently nonlinear and therefore does show a non-negligible dependence on the channel length, even for relatively ideal TFTs. [76,87,97,102] Nevertheless, while single-device characterization methods, such as the gated four-probe (gFP) method [65,79] and Kelvin probe force microscopy (KPFM), [85,86] can provide more detailed and potentially more accurate descriptions of the potential profiles at the contacts, the TLM is by far the most common approach for determining the contact resistance of organic as well as inorganic TFTs, due to its simplicity of implementation and its advantages in terms of providing minimal statistics for several devices.…”

Section: Measurement Of the Contact Resistancementioning

confidence: 99%

A Critical Outlook for the Pursuit of Lower Contact Resistance in Organic Transistors

et al. 2021

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He received his B.A. degree in physics from Rutgers University and M.S.E. degree in materials science and engineering from the University of Pennsylvania. He then worked as a staff scientist at Innova Dynamics in San Francisco, before completing his Ph.D. in materials science at the Max Planck Institute for Solid State Research and the University of Stuttgart, where he developed flexible high-frequency organic transistors with record-low contact resistance. His current research interests include light-matter interaction in organic semiconductors and interfaces in organic electronic devices. R. Thomas Weitz received his diploma in physics at the University of Heidelberg and his Ph.D. from the Max Planck Institute for Solid State Physics in Stuttgart. After a postdoc at Harvard University and the MPI in Stuttgart, he went into industrial research at BASF SE, Ludwigshafen. After having been a professor at the Ludwig-Maximilians University, Munich, he is currently a full professor at the 1st Institute of Physics at the Georg August University of Göttingen. His research is focused on quantum transport in low-dimensional materials and organic electronics.

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Section: Measurement Of the Contact Resistancementioning

confidence: 99%

A Critical Outlook for the Pursuit of Lower Contact Resistance in Organic Transistors

et al. 2021

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“…In TFTs, the drain current does not usually flow through the whole source or drain contact but is limited to a specific area of contact or is efficiently injected (or extracted) in a characteristic (effective) length ( L T ), expressed as: [ 47 ]

\begin{array}{*{20}{c}}{{L_{\rm{T}}} = \frac{{{R_{{\rm{S}}/{\rm{D}}}}}}{{{r_{{\rm{ch}}}}\coth \left( {\frac{{{L_{\rm{C}}}}}{{{L_{\rm{T}}}}}} \right)}}}\end{array}

The characteristic injection (or extraction) length ( L T ) increases with channel thickness, the bulk density of states and the source‐to‐drain contact resistances. [ 48 ] It is a critical parameter for designing (O)TFTs. Its discussion is addressed hereinafter for OECTs.…”

Section: Results Sand Discussionmentioning

confidence: 99%

“…The characteristic injection (or extraction) length (L T ) increases with channel thickness, the bulk density of states and the source-to-drain contact resistances. [48] It is a critical parameter for designing (O)TFTs. Its discussion is addressed hereinafter for OECTs.…”

Section: Characteristic Injection (Or Extraction) Length (L T )mentioning

confidence: 99%

Impact of Charge Carrier Injection/Extraction Performances in Low‐Dimension PEDOT:PSS Organic Electrochemical Transistors

Sych

Rannou

Jullien‐Palletier

et al. 2023

Adv Elect Materials

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Organic electrochemical transistors (OECT) are gaining momentum in future applications of biosensors and bioelectronics. Nonetheless, contact (or series) resistances (RS/D) remain underexplored, even though physical processes between the source/drain electrodes and organic mixed ionic‐electron conductors (OMIECs) drive a substantial part of their performances. To address this shortcoming, in this study, low‐dimension OECTs featuring 2 µm‐long poly(3,4‐ethylenedioxythiophene) and polystyrene sulfonate acid (PEDOT:PSS) channel are explored. Normalized contact resistances (RS/D⋅W) values as low as 1.4 W cm are obtained. It is observed that channel PEDOT:PSS thickness is not detrimental to RS/D but is impacting the cut‐off frequency. A figure‐of‐merit (h) expressing the charge‐carrier injection (or extraction, respectively) efficiency shows that planar depletion‐mode OECTs are not contact‐limited up to L = 30 µm channel length. Finally, an unprecedented approach that highlight the importance of optimizing the micro‐fabrication technologies is shown, by decreasing the contact overlap length, according to OMIECs physicochemical contact properties. Indeed, a transfer‐length method coupled to a current‐crowding model allow to fully understand the behavior of low‐dimension PEDOT:PSS OECTs and next, to optimize its circuits design. This is paving the way toward the development of OECTs‐based integrated circuits with faster switching speed, broadening further their scopes and future use as advanced bioelectronics platforms.

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“…Therefore, it is important to be analyze the presence of a contact resistance (R c ). This effect was analyzed in our structures using the transmission-line method (TLM) [24] for the two different layouts (Fig 1b). As can be seen in Fig.…”

Section: Analysis and Discussionmentioning

confidence: 99%

Bias Stress Effects in Low Temperature Amorphous Hf-In-ZnO TFTs Using RF-sputtering HfO2 as High-k Gate Dielectric

Pons-Flores¹,

Hernandez²,

Garduno³

et al. 2020

JICS

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In this work we analyze the electrical performance, contact resistance and the effects of positive and negative gatebias stress of Hf-In-ZnO/HfO2 thin film transistors. Devices were fabricated using RF-magnetron sputtering at room temperature and fully patterned, with operation voltage below 6 V. Devices with drain-currents up to 2x10-6 A and threshold voltages of ~2 V were analyzed under negative and positive gate bias stress. Devices under negative gate-bias stress showed a slightly threshold voltage shift due to the transistor channel is depleted of electrons at the channel/dielectric interface. Devices under positive gate-bias stress, showed threshold voltage shifts in the negative direction due to the reversible charge/discharge effect of the electrons in pre-existing high-k HfO2 bulk traps. Positive gate-bias stress does not cause any degeneration, since stressed devices tend to recover after 5 mins.

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On the series resistance in staggered amorphous thin film transistors

Cited by 17 publications

References 67 publications

A Critical Outlook for the Pursuit of Lower Contact Resistance in Organic Transistors

A Critical Outlook for the Pursuit of Lower Contact Resistance in Organic Transistors

Impact of Charge Carrier Injection/Extraction Performances in Low‐Dimension PEDOT:PSS Organic Electrochemical Transistors

Bias Stress Effects in Low Temperature Amorphous Hf-In-ZnO TFTs Using RF-sputtering HfO2 as High-k Gate Dielectric

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