On the scribing and subsequent fracturing of silicon semiconductor wafers

Misra, Ambrish; Fininie, I.

doi:10.1007/bf00610624

Cited by 30 publications

(19 citation statements)

References 8 publications

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“…130 It was reported that the indentation-induced median and radial cracks in (111) surface oriented silicon crystal and other brittle materials during loading and unloading cycles can be attributed to sessile dislocation reactions that are initiated at micro-slip system intersections. 133 The median crack propagates downwards, which is the objective of the scribing process. 133 The median crack propagates downwards, which is the objective of the scribing process.…”

Section: Blade Dicing Qualitymentioning

confidence: 99%

Die singulation technologies for advanced packaging: A critical review

Lei

Kumar

Yalamanchili

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Die singulation, also known as wafer dicing, is reviewed in terms of the brief history, critical challenges, characterization of singulation quality, different singulation technologies and underlying mechanisms, and post-singulation die strength enhancement. Mechanical blade dicing has been the workhorse of die separation in the semiconductor manufacturing process. It faces growing challenges due to the adoption of copper/low-k dielectric interconnect structures, thin and ultra-thin wafers, die attach films, narrow dicing streets, and complex stacked structures on the dicing streets. Key dicing quality characteristics are chipping, delamination, kerf geometry, die side wall damage, die surface contamination, and die strength degradation. Various die singulation technologies have been developed to address these challenges and quality issues, including dicing by thinning, laser based approaches, laser and mechanical hybrid method, and plasma dicing. Die strength is a critical parameter for thin and ultra-thin dies. Post-dicing die strength enhancement is becoming the complement of most dicing technologies to achieve dies with high fracture strength. Plasma dicing has the potential to achieve much higher die strengths than all the other dicing approaches.

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Section: Blade Dicing Qualitymentioning

confidence: 99%

Die singulation technologies for advanced packaging: A critical review

Lei

Kumar

Yalamanchili

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…Linear flaws may be formed by a long, straight, sharp wedge, [12][13][14] a circular, sharp-edged disk rolled over a surface, [15][16][17][18][19][20] or, as will be considered here, a sharp indenter translated over a surface to form a scratch. [21][22][23][24][25][26][27][28][29][30][31][32] The loading of the wedge, disk, or indenter is similar to that of the point contact flaw, primarily normal to the surface. Plan and cross-section images of the resulting linear flaws in glass, 12,20,21,[24][25][26] single crystals, [24][25][26]28 polycrystals, 13,14,[23][24][25][26][27][29][30][31] and rocks 12 all have similar features, Figure 1C,D, all in common with the point flaw of Figure 1A linear flaw has a rectangular-outline residual contact impression imbedded in an almost semicylindrical plastic deformation zone.…”

Section: Introductionmentioning

confidence: 99%

Fracture mechanics of sharp scratch strength of polycrystalline alumina

Cook

2016

J Am Ceram Soc

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The strength of a polycrystalline alumina containing controlled scratches introduced by translated sharp contacts is investigated and described by a multiscale fracture mechanics model. Inert strength measurements of samples containing quasi‐static and translated Vickers indentation contacts showed that scratches degraded the strength at normal contact loads an order of magnitude less than those for quasi‐static indentation. The fracture mechanics model developed to describe strength degradation by scratches over the full range of contact loads included toughening effects by crack‐wake bridging at the microscale and lateral crack‐based residual stress relaxation effects at the mesoscale. A critical element of the model is the nonlinear scaling of the residual stress field of a scratch with the normal contact load acting during scratch formation. The similarities and differences in the scratch model in comparison with prior indentation‐strength fracture mechanics models are highlighted by parallel development of both. Central to the scratch model is the use of easily controlled normal contact load as the scratch‐strength measurement variable. Scratch length and orientation are shown to have significant effects on strength. The distributions of scratch widths controlling the intrinsic strengths of as‐received samples are determined and agreement with the observed scratch dimensions is demonstrated.

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“…Several groups have published work on defect observations for scratches in silicon [1][2][3] ; in these works the silicon specimens are charac. terized by X-ray topography and the dislocation pit method after being annealing at temperatures above 900 ~ C. Mirsa and Finnie have observed three types of cracks induced by scribing and have discussed the scribing direction [4]. Residual stress induced in the process of semiconductor device fabrication was first quantitatively observed by Kotake and Takasu using the infra-red photoelastic technique [5].…”

Section: Introductionmentioning

confidence: 98%

The effect of annealing on residual stress and dislocation propagation in silicon slices with damaged layer induced by scribing

Kotake

Takasu

1981

J Mater Sci

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The effect of annealing on residual stress and dislocation propagation in silicon slices with a damaged layer induced by diamond scribing, laser scribing and diamond blade cutting was studied by infra-red photoelastic measurements and dislocation pit observations. Residual stress and dislocation propagation both showed clear annealing temperature dependence at temperatures above 500 ~ C, although the residual stress was greatly reduced by a small degree of dislocation propagation. The experimental results can be explained using the stress recovery theory by the model of the damaged layer with a mosaic crystal layer and a single crystal layer with micro-cracks and dislocations.

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On the scribing and subsequent fracturing of silicon semiconductor wafers

Cited by 30 publications

References 8 publications

Die singulation technologies for advanced packaging: A critical review

Die singulation technologies for advanced packaging: A critical review

Fracture mechanics of sharp scratch strength of polycrystalline alumina

The effect of annealing on residual stress and dislocation propagation in silicon slices with damaged layer induced by scribing

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