On the role and modeling of compressive strain in Si-Ge interdiffusion for SiGe heterostructures

Dong, Yuanwei; Chern, Winston; Mooney, P. M.; Hoyt, Judy L.; Xia, Guangrui

doi:10.1088/0268-1242/29/1/015012

Cited by 10 publications

(21 citation statements)

References 46 publications

(76 reference statements)

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“…15, and the other is the interdiffusivity model with full compressive strain (equivalently R = 0) in Ref. 16. The SIMS profiles fall in between the model predictions under these two extreme strain conditions, which indicates that the strain has partially relaxed during the thermal anneals.…”

Section: Resultsmentioning

confidence: 83%

“…Compressive strains play two main roles in Si-Ge interdiffusion: 16 thermodynamically, strain energy contributes to the driving force, and strain can change interdiffusivity itself. For strained multilayered SiGe structures, the strain energy contributes to the total free energy.…”

Section: Interdiffusivity Modeling and Discussionmentioning

confidence: 99%

“…reflects the magnitude of the biaxial strain energy contribution to the driving force, which depends on temperature and degree of relaxation R. In addition,D strained has been well modeled in our recent work, 16 and can be expressed asD strained =D relax e −q ε kT , [9] whereD relax is the interdiffusivity without strain in Ref. 15, q is the strain derivative of interdiffusivity in Ref.…”

Section: Gementioning

confidence: 99%

“…15, q is the strain derivative of interdiffusivity in Ref. 16, and q = 110 − 0.081T. T is the absolute temperature in Kelvin.…”

Section: Gementioning

confidence: 99%

“…15 In addition, the role of compressive strain in Si-Ge interdiffusion was modeled based on experimental data in Dong et al's recent work. 16 However, until now, there have been few studies available on Si-Ge interdiffusion behavior with partial compressive strain relaxation.This issue is of great relevance to the semiconductor industry, as strain relaxation is very common in semiconductor devices due to thin film thicknesses, 17,18 high Ge fractions, 19 high temperature anneals and ion implantation damage 20,21 etc. Thus, in this work Si-Ge interdiffusion under partial strain relaxation was investigated.…”

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confidence: 99%

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Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

Dong

Mooney

Cai

et al. 2014

ECS J. Solid State Sci. Technol.

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Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800 • C and 840 • C), the degree of relaxation, R, reached a "plateau", while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data. © 2014 The Electrochemical Society. [DOI: 10.1149/2.0041410jss] All rights reserved.Manuscript submitted May 28, 2014; revised manuscript received July 9, 2014. Published July 26, 2014.As electronic and optoelectronic devices are continuously scaled down for better performance, novel materials and process techniques have been developed and integrated into the state-of-the-art semiconductor device manufacturing. In the last decades, Si 1-x Ge x (0 ≤ x ≤ 1) alloys have become key materials in electronic devices. Examples are channel materials in p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) for higher hole mobilities, 1,2 the tunneling layer in tunneling FETs, 3 and the quantum wells in resonant tunneling diodes. 4 For optoelectronic applications, SiGe alloys and Ge are also employed in modulators, 5 Ge photodiodes 6,7 and Ge/Si lasers. 8,9 Si/Si 1-x Ge x and Si 1-x Ge x /Si 1-y Ge y heterostructures with abrupt changes in Ge concentration have become key structures for many electronic and optoelectronic devices. During the fabrication of those devices, especially the ones requiring high temperature processes, unavoidably, Si and Ge atoms interdiffuse at the interface between two layers in heterostructures. This interdiffusion increases exponentially with Ge concentration and compressive stress, and also increases with ion implantation damage. 10,11 Si-Ge interdiffusion is generally undesirable as it degrades MOSFET performance by reducing strain and carrier confinement and increasing alloy scattering. 12 It also decreases photodetector efficiency, 13 and delays the lasing of Ge/Si lasers.14 Therefore, understanding Si-Ge interdiffusion behavior under different strain conditions is a topic with great technological significance. In Dong et al's previous studies, a unified Si-Ge interdiffusivity model was built for Si-Ge interdiffusion without strain over the full Ge fraction range and was validated with experiments. 15 In addition, the role of compressive strain in Si-Ge interdiffusion was modeled based on experimental data in Dong et al's recent work. 16 However, until now, there have been few studies available on Si-Ge interdiffusion behavior with partial compressive strain ...

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Section: Resultsmentioning

confidence: 83%

Section: Interdiffusivity Modeling and Discussionmentioning

confidence: 99%

Section: Gementioning

confidence: 99%

“…15, q is the strain derivative of interdiffusivity in Ref. 16, and q = 110 − 0.081T. T is the absolute temperature in Kelvin.…”

Section: Gementioning

confidence: 99%

mentioning

confidence: 99%

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Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

Dong

Mooney

Cai

et al. 2014

ECS J. Solid State Sci. Technol.

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Diffusion in Semiconductors

Shaw¹

2017

Springer Handbook of Electronic and Photonic Materials

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Atomic diffusion in semiconductors refers to the migration of atoms, including host, dopant and impurities. Diffusion occurs in all thermodynamic phases, but the solid phase is the most important in semiconductors. There are two types of semiconductor solid phase: amorphous (including organic) and crystalline. In this chapter we consider crystalline semiconductors and describe the processes by which atoms and defects move between lattice sites. The emphasis is on describing the various conditions under which diffusion can occur, as well as the atomic mechanisms that are involved, rather than on tabulating data. For brevity's sake, we also focus on the general features found in the principal semiconductors from Groups IV, III-V and II-VI; IV-VI and oxide semiconductors are excluded from consideration. It is not surprising that most of the data available in this field relate to the semiconductors that are technologically important-they are used to fabricate electronic and optoelectronic devices. One unavoidable consequence of this technological need is that diffusion data tend to be acquired in a piecemeal fashion.

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Interdiffusion in group IV semiconductor material systems: applications, research methods and discoveries

Xia

2019

Science Bulletin

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Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic and photonic devices. In the growth and processing of these materials, nanometer scale interdiffusion happens that are generally undesirable for device performance. With higher Ge molar fractions and higher compressive strains, Si-Ge interdiffusion can be much faster than dopant diffusion. However, Si-Ge interdiffusion behaviors have not been well understood until recent years. Much less studies are available for GeSn. This review starts with basic properties and the applications of major group IV semiconductors, and then reviews the progress made so far on Si-Ge and Ge-Sn interdiffusion behaviors. Theories, experimental methods, design and practical considerations are discussed together with the key findings in this field.

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On the role and modeling of compressive strain in Si-Ge interdiffusion for SiGe heterostructures

Cited by 10 publications

References 46 publications

Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

Diffusion in Semiconductors

Interdiffusion in group IV semiconductor material systems: applications, research methods and discoveries

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