2006 IEEE International Symposium on Industrial Electronics 2006
DOI: 10.1109/isie.2006.295743
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On the Reliability of Power Silicon Rectifier Diodes above the Maximum Permissible Operation Junction Temperature

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Cited by 6 publications
(2 citation statements)
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“…With operating voltage and temperature above the rating parameters, leakage current increases dramatically and the diodes fail into short circuit at the chip's peripheral surface [14,15]. Experiments show that the diodes operation temperature can be increased without risks of failure by improving the junction edge current control, like a junction passivation process [16,17]. A further research reveals the mechanism is junction carrier avalanche multiplication, and the weak spots are near the chips' edge [18].…”
Section: Rising Of Leakage Currentmentioning
confidence: 99%
“…With operating voltage and temperature above the rating parameters, leakage current increases dramatically and the diodes fail into short circuit at the chip's peripheral surface [14,15]. Experiments show that the diodes operation temperature can be increased without risks of failure by improving the junction edge current control, like a junction passivation process [16,17]. A further research reveals the mechanism is junction carrier avalanche multiplication, and the weak spots are near the chips' edge [18].…”
Section: Rising Of Leakage Currentmentioning
confidence: 99%
“…It has been observed that a reduction in the operation temperature of a device can correspond to an exponential increase in the reliability and life expectancy of the device [1,2]. Among the designs for cooling application in electronic industry, natural convection in air has the economics, simplicity, and unmatched reliability, and continues to underscore the desire to cool systems and components.…”
Section: Introductionmentioning
confidence: 99%