2019
DOI: 10.1002/aenm.201901631
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On the Relation between the Open‐Circuit Voltage and Quasi‐Fermi Level Splitting in Efficient Perovskite Solar Cells

Abstract: photoluminescence yields (>20%). [5] In principle, this would allow open-circuit voltages (V OC ) very close to the radiative limit (≈1.3 V for a bandgap of 1.6 eV) using already existing perovskites. However, despite the tremendous effort devoted by the scientific community on the improvement of this solar cell technology, the experimental efficiencies are still far from the Shockely-Queisser (S.Q.) theoretical predictions of power conversion efficiency (PCE) up to 30%. [6] Specifically, in order to further i… Show more

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Cited by 320 publications
(398 citation statements)
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References 42 publications
(75 reference statements)
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“…With PEAI surface treatment, the V OC increased by 25 mV from 1.086 to 1.111 V and with tBBAI by 41 mV to 1.125 V compared to the control sample, which is in good agreement with the trend seen in the Δ E F measurements. The offset of ≈40 mV between the stabilized V OC and Δ E F / q can be explained by energetic misalignment at both interfaces as has been shown by Caprioglio et al17 This demonstrates the beneficial effect of PEAI and tBBAI treatment in preventing interfacial charge carrier recombination. Furthermore, it shows that tBBAI is a significantly better interface passivation agent than PEAI with a 65% higher Δ V OC increase compared to the sample without interface passivation layer.…”
Section: Photovoltaic Parameters Of Champion Devices With and Withoutsupporting
confidence: 62%
“…With PEAI surface treatment, the V OC increased by 25 mV from 1.086 to 1.111 V and with tBBAI by 41 mV to 1.125 V compared to the control sample, which is in good agreement with the trend seen in the Δ E F measurements. The offset of ≈40 mV between the stabilized V OC and Δ E F / q can be explained by energetic misalignment at both interfaces as has been shown by Caprioglio et al17 This demonstrates the beneficial effect of PEAI and tBBAI treatment in preventing interfacial charge carrier recombination. Furthermore, it shows that tBBAI is a significantly better interface passivation agent than PEAI with a 65% higher Δ V OC increase compared to the sample without interface passivation layer.…”
Section: Photovoltaic Parameters Of Champion Devices With and Withoutsupporting
confidence: 62%
“…However, if a considerable amount of interface states is present at the CTL/active layer interface in question, an increase in Δ E maj leads to a corresponding exponential increase of surface recombination at this interface as well (which outweighs the benefits due to the increased carrier density in the HTL), resulting in increased V oc losses. [ 23,35 ]…”
Section: Resultsmentioning
confidence: 99%
“…Note that, as almost any analytical relation, Equation is based on a number of assumptions that are further detailed in previous studies . An important assumption is that the solar cell presents an ideal diode behavior, with its V oc being equal to the quasi‐Fermi level splitting (QFLS) . However, the V oc of actual solar cells may not follow such an ideal diode behavior and present V oc s lower than that predicted from Equation , which presents an upper limit for the achievable V oc .…”
Section: Introductionmentioning
confidence: 99%
“…However, the V oc of actual solar cells may not follow such an ideal diode behavior and present V oc s lower than that predicted from Equation , which presents an upper limit for the achievable V oc . Some known reasons for such deviations from Equation are shunt resistance, carrier recombination not following the diode equation (Supporting Information S1), losses at contacts, or strong energy‐level offsets at interfaces . In sum, there are several nonidealities that may contribute to making the V oc of actual solar cells depart from V oc,rad .…”
Section: Introductionmentioning
confidence: 99%