On the properties of AlN thin films grown by low temperature reactive r.f. sputtering

Xinjiao, Li; Zechuan, Xu; He, Zhigang; Huazhe, Cao; Wuda, Su; Zhongcai, Chen; Zhou, Feng; Enguang, Wang

doi:10.1016/0040-6090(86)90056-8

Cited by 61 publications

(16 citation statements)

References 7 publications

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“…Using material constants [6][7][8][9][10][11] at room temperature, the phase velocities v 0,ph and the group velocities v 0,gr of the AlN/sapphire substrate are calculated by using Eq. (1), see For the center frequency of 680 MHz the simulated group velocity (5678 m/s) agrees well with the measured one of the delay lines (max.…”

Section: Greens Function Analysismentioning

confidence: 99%

Investigations of SAW delay lines on c-plane AlN/sapphire at elevated temperatures

Bruckner

Bardong

Fachberger

et al. 2010

2010 IEEE International Frequency Control Symposium

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Aluminum nitride (AlN) on sapphire is a promising substrate for SAW (surface acoustic wave) sensors operating at high temperatures and high frequencies. To get an experimental measure of the suitability and temperature stability of such devices, several samples of SAW delay lines were fabricated on 2" c-plane (0001) sapphire substrates with 1 µm c-plane AlN layer on top. Time-and frequency responses were recorded during annealing treatments at temperatures up to 850°C and the signals were analyzed afterwards.I.

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Section: Greens Function Analysismentioning

confidence: 99%

Investigations of SAW delay lines on c-plane AlN/sapphire at elevated temperatures

Bruckner

Bardong

Fachberger

et al. 2010

2010 IEEE International Frequency Control Symposium

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“…5 Finally, some LEDs utilize AlN as a strain buffer and nucleation material between Si substrates and subsequent GaN layers, 6 and as a part of active photon emitting structures down to the UV range. 7 AlN can be fabricated by various methods including "bulk material fabrication" methods, such as carbothermal nitridation of Al 2 O 3 and subsequent sintering, 8,9 or by thin film deposition methods such as sputtering 10 or metalorganic chemical vapor deposition. 11 More recently, plasmaenhanced atomic layer deposition (PEALD) has been demonstrated as an alternative method for AlN deposition.…”

Section: Introductionmentioning

confidence: 99%

Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

Broas

Sippola

Sajavaara

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films Broas, Mikael; Sippola, Perttu; Sajavaara, Timo; Vuorinen, Vesa; Perros, Alexander Pyymaki; Lipsanen, Harri; Paulasto-Kröckel, Mervi Broas, M., Sippola, P., Sajavaara, T., Vuorinen, V., Perros, A. P., Lipsanen, H., & Paulasto-Kröckel, M. (2016). Structural and chemical analysis of annealed plasmaenhanced atomic layer deposition aluminum nitride films.

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“…9. [37][38][39] The properties of the columnar structure can be attributed to zone T according to the model developed by Thornton. The films deposited at 3 mTorr exhibit nonuniform grain growth.…”

Section: Resultsmentioning

confidence: 99%

Growth of c -axis oriented aluminum nitride films on GaAs substrates by reactive rf magnetron sputtering

Cheng

Chen

Horng

et al. 1998

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inThe impact of argon admixture on the c-axis oriented growth of direct current magnetron sputtered ScxAl1−xN thin films Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti-Zr-N and Ti-Ta-N c-axis oriented aluminum nitride ͑AlN͒ films deposited on GaAs substrates by reactive rf magnetron sputtering were fabricated. The structural and morphological characterizations were found to be sensitive to the deposition conditions including rf power, N 2 concentration, sputtering pressure and substrate temperature. A highly c-axis oriented AlN film was identified as low as 350°C by x-ray diffraction. The crystallization of the AlN film with ͑002͒ preferred orientation tended to improve with increased rf power and N 2 concentration within the experimental range. A densely pebble-like surface texture of the c-axis oriented AlN films with an average grain size of about 80 nm was observed by scanning electron microscopy ͑SEM͒. The film showed a high degree of alignment of the columnar structure as was indicated by the cross-sectional SEM photograph. The selected area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure.

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On the properties of AlN thin films grown by low temperature reactive r.f. sputtering

Cited by 61 publications

References 7 publications

Investigations of SAW delay lines on c-plane AlN/sapphire at elevated temperatures

Investigations of SAW delay lines on c-plane AlN/sapphire at elevated temperatures

Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

Growth of c -axis oriented aluminum nitride films on GaAs substrates by reactive rf magnetron sputtering

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