On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

Veselov, D. A.; Shashkin, I. S.; Bakhvalov, K. V.; Lyutetskiy, A. V.; Pikhtin, N. A.; Rastegaeva, M. G.; Сліпченко, С. О.; Bechvay, E. A.; Strelets, V.A.; Shamakhov, V. V.; Tarasov, I. S.

doi:10.1134/s1063782616090244

Cited by 8 publications

(3 citation statements)

References 21 publications

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“…So far, semiconductor devices have achieved improved performance, , reduced power consumption, and improved integration through scaling down. However, issues of carrier velocity saturation , and threshold voltage reduction still need to be addressed, owing to the reduction in channel length, which is a limiting factor for scaled down processes below 100 nm. Many problems have occurred, and various methods are being studied, though not in universal scaling.…”

Section: Resultsmentioning

confidence: 99%

Theoretical Study of Anisotropic Carrier Mobility for Two-Dimensional Nb₂Se₉ Material

Chung

Lee

et al. 2021

ACS Omega

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Finding new materials with satisfying all the desired criteria for nanodevices is an extremely difficult work. Here, we introduce a novel Nb 2 Se 9 material as a promising candidate, capable of overcoming some physical limitations, such as a suitable band gap, high carrier mobility, and chemical stability. Unlike graphene, it has a noticeable band gap and no dangling bonds at surfaces that deteriorate transport properties, owing to its molecular chain structure. Using density functional theory (DFT) calculations with deformation potential (DP) theory, we find that the electron mobility of 2D Nb 2 Se 9 across the axis direction reaches up to 2.56 × 10 3 cm 2 V −1 s −1 and is approximately 2.5−6 times higher than the mobility of other 2D materials, such as MoS 2 , black phosphorous, and InSe, at room temperature. Moreover, the mobility of 2D Nb 2 Se 9 is highly anisotropic (μ a /μ c ≈ 6.5). We demonstrate the potential of 2D Nb 2 Se 9 for applications in nanoscale electronic devices and, possibly, mid-infrared photodetectors.

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Section: Resultsmentioning

confidence: 99%

Theoretical Study of Anisotropic Carrier Mobility for Two-Dimensional Nb₂Se₉ Material

Chung

Lee

et al. 2021

ACS Omega

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“…It is a new type of noninvasive imaging technology. It is based on conventional ultrasound examination and is injected by intravenous ultrasound [6]. Agents are used to enhance the human body's blood flow scattering signal, thereby merging the resolution, sensitivity, and specificity of a high ultrasound diagnosis.…”

Section: Introductionmentioning

confidence: 99%

Endoleak Detection after Endovascular Aortic Aneurysm Repair Using Ultrasound Based on Nanoscale Bubble Contrast Agents and Their Effects on Vascular Smooth Muscle Cell Proliferation and Migration

Pei

Feng

Fang

et al. 2021

Journal of Nanomaterials

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Abdominal aortic aneurysm (AAA) is the most common vascular disease that causes disability and death. Its morbidity is relatively subtle, and the mortality rate is high. Clinically, endovascular aortic aneurysm repair (EVAR) has gradually become the primary treatment of AAA due to its unique advantages such as low trauma and low incidence of short-term complications. However, the outcome of EVAR is greatly compromised by the possible occurrence of endoleaks. Contrast-enhanced ultrasound (CEUS) is a promising alternative technique to detect endoleaks following EVAR due to lack of exposure to ionizing radiation. Traditional ultrasound contrast agents with an overlarge size (microscale) leading to reluctant accumulation in target organs and instability trigger the requirement of nanoscale contrast agents that enter tumor tissues through the enhanced permeability and retention effect. In this study, we used ultrasound based on nanoscale bubble contrast agents to evaluate endoleak detection after endovascular aortic aneurysm repair and analyzed the effects of nanoscale bubble contrast agents on vascular smooth muscle cell (VSMC) proliferation and migration. Among 52 AAA patients a month following EVAR, there were 16 cases of endoleaks after EVAR detected by nanobubble contrast-enhanced ultrasound, including 6 cases of type I endoleak (1 case of type Ia endoleak and 5 cases of type Ib endoleak), 7 cases of type II endoleak, and 3 cases of type III endoleak; there were 12 cases of endoleak after EVAR detected by computed tomography angiography (CTA), including 6 cases of type I endoleak (1 case of type Ia and 5 cases of type Ib), 5 cases of type II endoleak, and 1 case of type III endoleak. Six months after EVAR, 3 cases of type III endoleak were detected by both nanobubble contrast-enhanced ultrasound and CTA. Vascular smooth muscle cells (VSMCs) used for in vitro experiments were subjected to ultrasound irradiation and platelet-derived growth factor (PDGF) treatment with or without the addition of nanobubble contrast agents. After high-intensity and long-term irradiation (0.75 W/cm2 and 1 W/cm2 irradiation for 120 s and 150 s, respectively) by ultrasound with or without the addition of nanobubble contrast agents, PDGF-induced VSMC migration was inhibited ( P < 0.01 ). Low-intensity and short-term ultrasound irradiation did not differ PDGF-induced VSMC migration ( P > 0.05 ), but 0.5 W/cm2 and 90 s ultrasound irradiation could significantly inhibit PDGF-induced VSMC migration without the addition of nanobubble contrast agents ( P < 0.05 ). When VSMCs were irradiated at 1, 0.75, 0.5, and 0.35 W/cm2 for 30 s to 150 s, ultrasound irradiation with or without the addition of nanobubble contrast agents remarkably reduced PDGF-induced VSMC proliferation, as evidenced by reduced OD values ( P < 0.05 ). In conclusion, ultrasound based on nanoscale bubble contrast agents is an effective alternative detection method for the occurrence of AAA patients who are not suitable for CTA.

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“…Возможность изготовления механически сильнонапряженных эпитаксиальных слоев в таких структурах с различием параметров кристаллических решеток вплоть до 1.5% позволяет дополнительно улучшить рабочие характеристики лазерных диодов [3]. Установлено, что лазерные диоды с ГС Al x Ga y In 1-x-y As/InP способны достигать значения порогового тока 20 мА [4][5][6][7]. В ГС с КЯ Al x Ga y In 1-x-y As со степенью рассогласования +1% значение порогового тока равнялось 25 мА [7].…”

Section: Introductionunclassified

Расчет упругонапряженной гетероструктуры AlXGaYIn1–X–YAs/InP с квантовыми ямами для эффективных лазерных излучателей

Svetogorov¹,

Акчурин²,

Мармалюк³

et al. 2018

Российский технологический журнал

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Выполнены расчеты составов эпитаксиальных слоев, формирующих низкоразмерные гетероструктуры Al x Ga y In 1-x-y As/InP для лазерных диодов с длиной волны излучения 1.55 мкм. При проведении расчетов ставилась задача обеспечения максимальной высоты энергических барьеров для эффективного ограничения носителей заряда в квантовых ямах. Наряду с эффектом размерного квантования энергии свободных носителей заряда в разрешенных зонах, учитывалось влияние упругих напряжений в эпитаксиальных слоях на смещение краев энергетических зон. Показано, что для решения поставленных задач необходимо формирование гетероструктур с напряжениями упругого сжатия в квантовой яме и напряжениями упругого растяжения в барьерных слоях. Предложена структура, включающая барьерный слой Al 0.28 Ga 0.30 In 0.42 As толщиной 110 Å и квантовую яму Al 0.03 Ga 0.23 In 0.74 As в слое толщиной 55 Å со степенями рассогласования параметров кристаллической решетки с подложкой InP-0.8% и +1.4%, соответственно. По результатам расчетной оценки, указанные толщины эпитаксиальных слоев не превышают критических значений, способных привести к образованию дислокаций несоответствия на гетерограницах. Ключевые слова: лазерные диоды, квантовая яма, Al x Ga y In 1-x-y As/InP, механические напряжения, уровни размерного квантования.

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On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

Cited by 8 publications

References 21 publications

Theoretical Study of Anisotropic Carrier Mobility for Two-Dimensional Nb₂Se₉ Material

Theoretical Study of Anisotropic Carrier Mobility for Two-Dimensional Nb₂Se₉ Material

Endoleak Detection after Endovascular Aortic Aneurysm Repair Using Ultrasound Based on Nanoscale Bubble Contrast Agents and Their Effects on Vascular Smooth Muscle Cell Proliferation and Migration

Расчет упругонапряженной гетероструктуры AlXGaYIn1–X–YAs/InP с квантовыми ямами для эффективных лазерных излучателей

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On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

Cited by 8 publications

References 21 publications

Theoretical Study of Anisotropic Carrier Mobility for Two-Dimensional Nb2Se9 Material

Theoretical Study of Anisotropic Carrier Mobility for Two-Dimensional Nb2Se9 Material

Endoleak Detection after Endovascular Aortic Aneurysm Repair Using Ultrasound Based on Nanoscale Bubble Contrast Agents and Their Effects on Vascular Smooth Muscle Cell Proliferation and Migration

Расчет упругонапряженной гетероструктуры AlXGaYIn1–X–YAs/InP с квантовыми ямами для эффективных лазерных излучателей

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Theoretical Study of Anisotropic Carrier Mobility for Two-Dimensional Nb₂Se₉ Material

Theoretical Study of Anisotropic Carrier Mobility for Two-Dimensional Nb₂Se₉ Material