On the preparation, optical properties and electrical behaviour of aluminium nitride

Cox, G. A.; Cummins, Donal; Kawabe, Kazuo; Tredgold, R.H.

doi:10.1016/0022-3697(67)90084-4

Cited by 118 publications

(37 citation statements)

References 24 publications

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“…2 and 3 starts at wavelengths higher than 400 nm. Instead we believe that the component peak at 430 nm is similar to the emission observed by Cox et al 26 and Jin et al in AlN nanostructures excited with slightly higher energy than we used, 325 nm. 21 This peak has been previously attributed to a deep level aluminum interstitial (Al i ).…”

Section: -5supporting

confidence: 87%

Broadband white light emission from Ce:AlN ceramics: High thermal conductivity down-converters for LED and laser-driven solid state lighting

et al. 2016

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We introduce high thermal conductivity aluminum nitride (AlN) as a transparent ceramic host for Ce3+, a well-known active ion dopant. We show that the Ce:AlN ceramics have overlapping photoluminescent (PL) emission peaks that cover almost the entire visible range resulting in a white appearance under 375 nm excitation without the need for color mixing. The PL is due to a combination of intrinsic AlN defect complexes and Ce3+ electronic transitions. Importantly, the peak intensities can be tuned by varying the Ce concentration and processing parameters, causing different shades of white light without the need for multiple phosphors or light sources. The Commission Internationale de l’Eclairage coordinates calculated from the measured spectra confirm white light emission. In addition, we demonstrate the viability of laser driven white light emission by coupling the Ce:AlN to a readily available frequency tripled Nd-YAG laser emitting at 355 nm. The high thermal conductivity of these ceramic down-converters holds significant promise for producing higher power white light sources than those available today.

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Section: -5supporting

confidence: 87%

Broadband white light emission from Ce:AlN ceramics: High thermal conductivity down-converters for LED and laser-driven solid state lighting

et al. 2016

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“…nitrogen deficiency, in the lattice [2,8,32]. However, the ionization levels calculated for V N [26,33] do not fit, and no agreed model exists on how those vacancies would lead to the absorption band observed.…”

Section: Article In Pressmentioning

confidence: 83%

“…However, the ionization levels calculated for V N [26,33] do not fit, and no agreed model exists on how those vacancies would lead to the absorption band observed. For interstitial aluminum as proposed by Cox et al [32], no data are available. According to our chemical analysis, the peak may be attributed to tungsten contamination.…”

Section: Article In Pressmentioning

confidence: 98%

Characterization of bulk AlN with low oxygen content

Bickermann

Epelbaum

Winnacker

2004

Journal of Crystal Growth

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“…Most of the observations deduced that the broad emission band originates from the vacancy of Al or O impurity [77][78][79][80][81]. For instance, Cox et al [77] attributed the emission band of AlN nanocrystalline with a peak centered at 2.8 eV to Al interstitials; Berzina et al [79] concluded that O impurity and Al vacancy were responsible for the two photoluminescence bands of AlN crystalline lattice observed at 3.10 and 2.05 eV; and Liu et al [19] indicated that the broad blue emission band of AlN nanocones centered at 481 nm (2.58 eV) is due to the singly ionized N vacancy in AlN. From all the reported interpretations, it may be concluded that the broadening phenomenon of the blue emission band is highly dependent on the level of defects.…”

Section: Photoluminescence Propertiesmentioning

confidence: 98%

AlN nanowires: synthesis, physical properties, and nanoelectronics applications

Kenry

Yong

2012

J Mater Sci

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One-dimensional aluminum nitride (AlN) nanostructures, especially AlN nanowires, have been subjected to numerous investigations due to their unique physical properties and applications ranging from electronics to biomedical. This article reviews the synthesis of AlN nanowires and studies their physical properties and potential nanoelectronics applications. First, the different fabrication techniques used to synthesize AlN nanowires and their growth mechanisms are discussed. Next, the physical properties of AlN nanowires, such as the field emission, transport, photoluminescence, as well as the mechanical and piezoelectric properties are summarized. Finally, the potential applications of AlN nanowires in the field of nanoelectronics are described. Furthermore, this review summarizes the perspectives and outlooks on the future development of AlN nanowires.Introduction and background of aluminum nitride (AlN) nanowires

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On the preparation, optical properties and electrical behaviour of aluminium nitride

Cited by 118 publications

References 24 publications

Broadband white light emission from Ce:AlN ceramics: High thermal conductivity down-converters for LED and laser-driven solid state lighting

Broadband white light emission from Ce:AlN ceramics: High thermal conductivity down-converters for LED and laser-driven solid state lighting

Characterization of bulk AlN with low oxygen content

AlN nanowires: synthesis, physical properties, and nanoelectronics applications

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