On the preparation of vanadium doped PVT grown SiC boules with high semi-insulating yield

Bickermann, Matthias; Weingärtner, Roland; Winnacker, A.

doi:10.1016/s0022-0248(03)01179-5

Cited by 46 publications

(43 citation statements)

References 28 publications

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“…For all these wafers, the vanadium concentration was below its solubility limit, so no precipitates were visible by scanning electron microscopy (SEM). As reported in many papers, 1,8 the nitrogen concentration at the seed end was higher than that of the tail due to the depletion of nitrogen inside the crucible during growth. For most of the wafers, lower nitrogen concentration (<3 9 10 16 cm À3 ) was achieved.…”

Section: Resultssupporting

confidence: 50%

“…1,2 In general, the semi-insulating property of silicon carbide is realized by compensation of all shallow donors or acceptors with deep levels. In nominally undoped physical vapor transport (PVT)-grown SiC crystals, nitrogen is usually the main residual donor impurity, which is attributed to desorption of N 2 absorbed on porous graphite parts and SiC powder.…”

Section: Introductionmentioning

confidence: 99%

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Growth of 2-Inch V-Doped Bulk 6H-SiC with High Semi-Insulating Yield

Hao

Wang

Feng

et al. 2009

Journal of Elec Materi

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A physical vapor transport process for growing vanadium-doped 6H-SiC single crystals was developed. Some 2-inch 6H-SiC wafers with resistivity larger than 10 12 X cm were obtained. A yield of semi-insulating wafers of 89% for the whole ingot was achieved, which indicates that a decrease in the incorporation of nitrogen and control of the consumption of vanadium during the whole growth run was successful. The concentrations of vanadium N V and nitrogen N N , determined by secondary-ion mass spectroscopy (SIMS), and the calculated relation of resistivity versus N V /N N helped us explore the reason for this high resistivity and high semi-insulating yield.

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Section: Resultssupporting

confidence: 50%

Section: Introductionmentioning

confidence: 99%

Growth of 2-Inch V-Doped Bulk 6H-SiC with High Semi-Insulating Yield

Hao

Wang

Feng

et al. 2009

Journal of Elec Materi

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“…This leads to a gradual reduction of the vanadium concentration in the SiC boule along the growth direction [6]. Vanadium is an amphoteric impurity in 6H/4H-SiC, producing two deep levels in the bandgap, one donor (V 4+/5+ ) and one acceptor (V 4+/3+ ), which can compensate both shallow donors and shallow acceptors.…”

Section: V-doped Semi-insulating 6h-sicmentioning

confidence: 99%

6H and 4H-SiC Bulk Growth by PVT and Advanced PVT (APVT)

Gupta¹,

Yoganathan²,

Semenas³

et al. 2004

MRS Proc.

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II-VI, Inc. is a commercial supplier of high-quality SiC substrates (including 2-inch and 3-inch diameter) for RF and power applications to the US market. Semi-insulating 6H-SiC single crystals, doped with vanadium and undoped (vanadium-free), as well as ntype 4H crystals have been grown using the PVT and Advanced PVT (APVT) growth techniques. The APVT process incorporates insitu synthesis and growth of of SiC crystal from Si and C precursors.Grown 6H-SiC and 4H-SiC crystals have been extensively characterized with respect to their purity, crystal quality and electrical properties. COREMA resistivity maps demonstrate that V-compensated boules exhibited axially and radially uniform resistivity around 10 11 Ω·cm at room temperature. Undoped (V-free) wafers contained residual boron and nitrogen at levels below 10 16 atoms/cm 3 , and demonstrated semi-insulating properties (resistivity between 10 6 and 10 11 Ω·cm) as a result of compensation by native point defects with deep levels in the bandgap. The undoped semi-insulating crystals grown by APVT contained boron and nitrogen at 1.9·10 15 cm --3 3 and 3.8·10 15 cm --3 3 , respectively.High-quality 2-inch SiC wafers exhibited micropipe densities on the order of 10 cm -2 and dislocation density on the order of 10 4 cm -2 .

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“…Therefore, semi-insulating (SI) substrate, which exhibits low dielectric loss, is preferably used for the fabrication of microwave device. Intentional vanadium doping into 4H-SiC single crystal is an effective way to obtain the SI single crystal [6]. In past, electron paramagnetic resonance (EPR) [7], photo-EPR [8], temperature-dependent Hall effect (TDH), and optical absorption [9] were used to investigate deep levels of impurities in SiC single crystals.…”

Section: Introductionmentioning

confidence: 99%

Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC Wafers

Yang

Cui

et al. 2014

Acta Metall. Sin. (Engl. Lett.)

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The resistivities of vanadium-doped semi-insulating 4H-SiC wafers were measured by a contactless resistivity measurement system. Anomalous resistivity was found in semi-insulating 4H-SiC wafer. Raman spectra of semi-insulating 4H-SiC wafer indicated that the anomalous resistivity was caused by polytype inclusion. Based on the activation energies of different SiC polytypes calculated from resistivity versus temperature data measured by COREMA-VT, the resistivities in the vanadium-doped semi-insulating 4H-SiC wafer with 6H polytype inclusion were calculated. The calculated resistivities are quite consistent with the measured resistivities. Furthermore, the compensation mechanism for the formation of anomalous resistivity was proposed.

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On the preparation of vanadium doped PVT grown SiC boules with high semi-insulating yield

Cited by 46 publications

References 28 publications

Growth of 2-Inch V-Doped Bulk 6H-SiC with High Semi-Insulating Yield

Growth of 2-Inch V-Doped Bulk 6H-SiC with High Semi-Insulating Yield

6H and 4H-SiC Bulk Growth by PVT and Advanced PVT (APVT)

Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC Wafers

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