On the preparation and electrical properties of thallium bismuth diselenide crystals

Salem, A.; Abdulwahed, J.A. Mohammed

doi:10.1016/j.jcrysgro.2020.125737

Cited by 3 publications

(2 citation statements)

References 22 publications

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“…• Over the entire temperature range of examination, our sample exhibits n-type conductivity with no polarity charges, which is consistent with our previous Hall coefficient data [11] and is consistent with the data in this study [16]. • The value of the thermoelectric power α for TlBiSe 2 at room temperature was set to 624 µV/K, which is greater than the value in [17] for K 2 Cu 2 GeS 4 chalcogenide.…”

Section: Resultssupporting

confidence: 90%

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Investigation of Thermoelectric Properties of Thallium Bismuth Diselenide Crystals

Abdulwahed

2023

Acta Phys. Pol. A

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Thermoelectric materials, which can be used in high-efficiency cooling and refrigeration, as well as energy scavenging, sensing, and thermo-power systems, can help to solve the global energy issue by providing a long-term energy solution. Our study sheds light on the thermoelectric power measurements of thallium bismuth diselenide crystals. A modified Bridgman technique was used to make TlBiSe2 crystals. TlBiSe2 crystals are particularly engaging in the quest for more effective thermoelectric materials that can change thermal energy to electrical energy and vice versa. The properties of thermal transport were studied. Thermoelectric power measurements were performed at temperatures ranging from 211 to 504 K. Based on these measurements, the conductivity of the crystals was determined to be n-type. The mobilities of the charge carriers, i.e., holes and electrons, were calculated to be 0.0115 cm 2 /(V s) and 0.0229 cm 2 /(V s), respectively. The effective masses of the majority and minority carriers were determined to be 4.3 × 10 −33 kg and 1.6 × 10 −31 kg, respectively. In addition, the relaxation times, diffusion coefficients, and diffusion lengths of both majority and minority carriers were checked. All the obtained parameters revealed that this semiconducting compound can be used in the fields of energy conversion, semiconducting devices, and electronic engineering. topics: characterization of crystals, TlBiSe2, thermoelectric power

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Section: Resultssupporting

confidence: 90%

“…The silica tube features a restricted pointed end at the rim to make seeding simpler. The description of the effective sample preparation has been published by us [11].…”

Section: Preparation Of Tlbisementioning

confidence: 99%

Investigation of Thermoelectric Properties of Thallium Bismuth Diselenide Crystals

Abdulwahed

2023

Acta Phys. Pol. A

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Extolling thermoelectric properties of incommensurate (IC) TlBiSe2 polycrystals prepared by melt temperature oscillation method

B.¹,

Venkatesan²,

Nagaraj³

et al. 2023

Ceramics International

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First-principles investigation of structural and electronic properties of Tl_xAl_1−xP ternary alloys

Gülebağlan

2021

Journal of Taibah University for Science

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On the preparation and electrical properties of thallium bismuth diselenide crystals

Cited by 3 publications

References 22 publications

Investigation of Thermoelectric Properties of Thallium Bismuth Diselenide Crystals

Investigation of Thermoelectric Properties of Thallium Bismuth Diselenide Crystals

Extolling thermoelectric properties of incommensurate (IC) TlBiSe2 polycrystals prepared by melt temperature oscillation method

First-principles investigation of structural and electronic properties of Tl_xAl_1−xP ternary alloys

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On the preparation and electrical properties of thallium bismuth diselenide crystals

Cited by 3 publications

References 22 publications

Investigation of Thermoelectric Properties of Thallium Bismuth Diselenide Crystals

Investigation of Thermoelectric Properties of Thallium Bismuth Diselenide Crystals

Extolling thermoelectric properties of incommensurate (IC) TlBiSe2 polycrystals prepared by melt temperature oscillation method

First-principles investigation of structural and electronic properties of TlxAl1−xP ternary alloys

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First-principles investigation of structural and electronic properties of Tl_xAl_1−xP ternary alloys