On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors

Koswatta, Siyuranga O.; Koester, Steven J.; Haensch, Wilfried

doi:10.1109/ted.2010.2079250

Cited by 163 publications

(89 citation statements)

References 39 publications

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“…The use of the GaSb/InAs hetero-junction usually provides a larger I ON compared to InAs homojunction TFETs, but such a potential improvement is partly frustrated by quantum confinement effects that tend to turn the supposedly broken-bandgap GaSb/InAs hetero-junction into an actually staggered band alignment system, as illustrated in figure 15. These effects reduce the advantages of the GaSb/InAs hetero-junction compared to an InAs homo-junction TFET, and also compared to the ideal broken-bandgap, 1D system considered in [135]. According to our results, the GaSb/InAs hetero-junction TFET is still unable to reach the very demanding ITRS specifications for low power applications, which prescribe an I ON /I OFF ratio larger than 10 7 and = I 10…”

Section: Hetero-junction Modeling and Engineeringmentioning

confidence: 71%

A review of selected topics in physics based modeling for tunnel field-effect transistors

Esseni

Pala

Palestri

et al. 2017

Semicond. Sci. Technol.

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The research field on tunnel-FETs (TFETs) has been rapidly developing in the last ten years, driven by the quest for a new electronic switch operating at a supply voltage well below 1 V and thus delivering substantial improvements in the energy efficiency of integrated circuits. This paper reviews several aspects related to physics based modeling in TFETs, and shows how the description of these transistors implies a remarkable innovation and poses new challenges compared to conventional MOSFETs. A hierarchy of numerical models exist for TFETs covering a wide range of predictive capabilities and computational complexities. We start by reviewing seminal contributions on direct and indirect band-to-band tunneling (BTBT) modeling in semiconductors, from which most TCAD models have been actually derived. Then we move to the features and limitations of TCAD models themselves and to the discussion of what we define non-self-consistent quantum models, where BTBT is computed with rigorous quantum-mechanical models starting from frozen potential profiles and closed-boundary Schrödinger equation problems. We will then address models that solve the open-boundary Schrödinger equation problem, based either on the non-equilibrium Green's function NEGF or on the quantum-transmitting-boundary formalism, and show how the computational burden of these models may vary in a wide range depending on the Hamiltonian employed in the calculations. A specific section is devoted to TFETs based on 2D crystals and van der Waals hetero-structures. The main goal of this paper is to provide the reader with an introduction to the most important physics based models for TFETs, and with a possible guidance to the wide and rapidly developing literature in this exciting research field.

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Section: Hetero-junction Modeling and Engineeringmentioning

confidence: 71%

A review of selected topics in physics based modeling for tunnel field-effect transistors

Esseni

Pala

Palestri

et al. 2017

Semicond. Sci. Technol.

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“…This can affect the photon absorption and electron transition process and is applicable in photo detectors [39,40] and mid-infrared lasers [41]. In tunneling transistors [42], the type II heterojunction is utilized to enhance the tunneling current. However, in a type II junction, a finite tunneling barrier is not high enough to hinder the carrier transmission.…”

Section: D Semiconductors/semiconducting Oxide Heterostructuresmentioning

confidence: 99%

Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

2017

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Two-dimensional semiconductors, such as transition-metal dichalcogenides (TMDs) and black phosphorous (BP), have found various potential applications in electronic and opto-electronic devices. However, several problems including low carrier mobility and low photoluminescence efficiencies still limit the performance of these devices. Interfacing 2D semiconductors with functional oxides provides a way to address the problems by overcoming the intrinsic limitations of 2D semiconductors and offering them multiple functionalities with various mechanisms. In this review, we first focus on the physical effects of various types of functional oxides on 2D semiconductors, mostly on MoS 2 and BP as they are the intensively studied 2D semiconductors. Insulating, semiconducting, conventional piezoelectric, strongly correlated, and magnetic oxides are discussed. Then we introduce the applications of these 2D semiconductors/functional oxides systems in field-effect devices, nonvolatile memory, and photosensing. Finally, we discuss the perspectives and challenges within this research field. Our review provides a comprehensive understanding of 2D semiconductors/functional oxide heterostructures, and could inspire novel ideas in interface engineering to improve the performance of 2D semiconductor devices.

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“…The limited ON current is, in fact, one of the major uncertainties of these devices. However, there are projections for ON currents of 1900µA per micrometer of channel width with 0.4 V supply voltage [9] which would be competitive with respect to high performance MOSFET. Revisions of state of the art in TFETs development can be found in [10], [11].…”

Section: Introductionmentioning

confidence: 99%

Complementary tunnel gate topology to reduce crosstalk effects

Núñez

Avedillo

2016

2016 Conference on Design of Circuits and Integrated Systems (DCIS)

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Abstract-Tunnel transistors are one of the most attractive steep subthreshold slope devices which are being investigated to overcome power density and energy inefficiency exhibited by CMOS technology. There are design challenges associated to their distinguishing characteristic which are being addressed. In this paper the impact of the non-symmetric conduction of tunnel transistors (TFETs) on the speed of TFETs circuits under crosstalk is analyzed and a novel topology for complementary tunnel transistors gates, which mitigates the observed performance degradation without power penalties, is described and evaluated.

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On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors

Cited by 163 publications

References 39 publications

A review of selected topics in physics based modeling for tunnel field-effect transistors

A review of selected topics in physics based modeling for tunnel field-effect transistors

Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

Complementary tunnel gate topology to reduce crosstalk effects

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