On the phase-noise and phase-error performances of multiphase LC CMOS VCOs

Andreani, Pietro; Wang, Xiaoyan

doi:10.1109/jssc.2004.835828

Cited by 187 publications

(115 citation statements)

References 17 publications

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“…in (2) and this ensures that OSC_Q is delayed with respect to OSC_I, thus confirming the effect of signs choice in (1).…”

Section: First Eigenvector Extractionsupporting

confidence: 58%

“…A quadrature oscillator can easily fit such request avoiding the use of a dedicated circuitry in conjunction with a single standard oscillator. However there are still many issues with quadrature oscillators concerning in particular the relation between phase noise and quadrature error [1]. In authors opinion, quadrature oscillators should be regarded a coupled system in the whole and this aspect increment the difficult of a theoretical noise treatment.…”

Section: Introductionmentioning

confidence: 99%

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Floquet Eigenvectors Theory of Pulsed Bias Phase and Quadrature Harmonic Oscillators

Palma

Perticaroli

2012

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The paper presents an analytical derivation of Floquet eigenvalues and eigenvectors for a class of harmonic phase and quadrature oscillators. The derivation refers in particular to systems modeled by two parallel RLC resonators with pulsed energy restoring. Pulsed energy restoring is obtained through parallel current generators with an impulsive characteristic triggered by the resonators voltages. In performing calculation the initial hypothesis of the existence of stable oscillation is only made, then it is verified when both oscillation amplitude and eigenvalues/eigenvectors are deduced from symmetry conditions on oscillator space state. A detailed determination of the first eigenvector is obtained. Remaining eigenvectors are hence calculated with realistic approximations. Since Floquet eigenvectors are acknowledged to give the correct decomposition of noise perturbations superimposed to the oscillator space state along its limit cycle, an analytical and compact model of their behavior highlights the unique phase noise properties of this class of oscillators.

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“…in (2) and this ensures that OSC_Q is delayed with respect to OSC_I, thus confirming the effect of signs choice in (1).…”

Section: First Eigenvector Extractionsupporting

confidence: 58%

Section: Introductionmentioning

confidence: 99%

Floquet Eigenvectors Theory of Pulsed Bias Phase and Quadrature Harmonic Oscillators

Palma

Perticaroli

2012

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“…This is due to the fact that the phase noise at one oscillator output is totally correlated to the phase noise at any other output [11]; thus, the phase noise at different outputs adds up amplitude-wise and not power-wise, and there is no net SNR improvement by processing several outputs instead of only one.…”

Section: Improved Fdsm Designsmentioning

confidence: 99%

A 0.2V, 7.5 μW, 20 kHz ΣΔ modulator with 69 dB SNR in 90 nm CMOS

Wismar

Wisland

Andreani

2007

ESSCIRC 2007 - 33rd European Solid-State Circuits Conference

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A 0.2 V, 7.5 µW, 20 kHz Σ∆ modulator with 69 dB SNR in 90 nm CMOS Abstract-This paper presents a frequency-to-digital Σ∆ modulator designed in a digital 90 nm CMOS process, operating with a supply voltage of 0.2 V. For a 7.5 µW power consumption, the SNR is 68.9 dB and the SNDR is 60.3 dB over a 20 Hz-20 kHz bandwidth. This work shows that the SNR/SNDR performance of this kind of Σ∆ converter can be adjusted over a wide range, while maintaining a state-of-the-art figure-of-merit of 82 fJ/conversion.

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“…The design procedure of QVCO is as follows: (1) finding the LC -resonator often based on right-handed (RH) transmission line (TL) structures or scarcely with left-handed (LH) structures [3,4], (2) combining the LCresonator with active transistors to form the differential VCOs in crosscoupled, Colpitts, or Clapp form, and (3) using two differential VCOs and passive or active coupling devices or a composite to ensure the two VCOs run in quadrature phase. The most popular QVCOs [5,6] with parallel-coupled or bottom/top-series coupling transistors can be analyzed with the method described in [5], and the coupling devices may introduce the injection flicker noise and degrade the phase noise of oscillator. When large coupling MOSFETs are used the power consumption increases.…”

Section: Introductionmentioning

confidence: 99%

Quadrature Vco Formed With Two Colpitts Vco Coupled via an Lc-Ring Resonator

Jang¹,

Lin²,

Chang³

et al. 2011

PIER C

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Abstract-This paper presents a new quadrature voltage-controlled oscillator (QVCO), which consists of two p-core Colpitts cross-coupled voltage-controlled oscillators (VCOs) with an LC ring resonator to provide the quadrature outputs. The proposed CMOS QVCO has been implemented with the TSMC 0.18 µm CMOS technology and the die area is 0.478×0.82 mm 2 . At the supply voltage of 1.5 V, the total power consumption is 20.4 mW. The free-running frequency of the QVCO is tunable from 9.69 GHz to 10.52 GHz as the tuning voltage is varied from 0.0 V to 2 V. The measured phase noise at 1 MHz frequency offset is −122.41 dBc/Hz at the oscillation frequency of 10.52 GHz and the figure of merit (FOM) of the proposed QVCO is −189.7 dBc/Hz.

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On the phase-noise and phase-error performances of multiphase LC CMOS VCOs

Cited by 187 publications

References 17 publications

Floquet Eigenvectors Theory of Pulsed Bias Phase and Quadrature Harmonic Oscillators

Floquet Eigenvectors Theory of Pulsed Bias Phase and Quadrature Harmonic Oscillators

A 0.2V, 7.5 μW, 20 kHz ΣΔ modulator with 69 dB SNR in 90 nm CMOS

Quadrature Vco Formed With Two Colpitts Vco Coupled via an Lc-Ring Resonator

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On the phase-noise and phase-error performances of multiphase LC CMOS VCOs

Cited by 187 publications

References 17 publications

Floquet Eigenvectors Theory of Pulsed Bias Phase and Quadrature Harmonic Oscillators

Floquet Eigenvectors Theory of Pulsed Bias Phase and Quadrature Harmonic Oscillators

A 0.2V, 7.5 &#x03BC;W, 20 kHz &#x03A3;&#x0394; modulator with 69 dB SNR in 90 nm CMOS

Quadrature Vco Formed With Two Colpitts Vco Coupled via an Lc-Ring Resonator

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Product

Resources

About

A 0.2V, 7.5 μW, 20 kHz ΣΔ modulator with 69 dB SNR in 90 nm CMOS