On the Origin of Kink Effect in Current–Voltage Characteristics of AlGaN/GaN High Electron Mobility Transistors

Balakrishnan, V.R.; Panwar, B.S.; Muralidharan, R.

doi:10.1109/ted.2013.2279158

Cited by 37 publications

(12 citation statements)

References 34 publications

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“…With respect to SiC substrate, there are some challenges including the lattice mismatch between GaN and Si (%17%) [6], which results in higher density of dislocations in the GaN-substrate interface. These dislocations manifest themselves as electrons or holes traps [19][20][21][22]. These traps are responsible for the last mentioned IV kink and DC-RF dispersion.…”

Section: Thermal and Trapping Induced Kink Effectmentioning

confidence: 98%

Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects

Jarndal

Ghannouchi

2016

Solid-State Electronics

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Section: Thermal and Trapping Induced Kink Effectmentioning

confidence: 98%

Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects

Jarndal

Ghannouchi

2016

Solid-State Electronics

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“…Up to now, the studies of GaN based devices working at low temperature focus on the following aspects: (1) Enhanced transport properties at low temperature due to the weaker phonon scattering [8], [9]; (2) More excellent DC and RF properties at low temperature [10], [11]; (3) The kink effect associated with impact ionization [12]. Most researches have focused on the characterization of the GaN material and devices at low temperature.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature

Zhu

Hou

et al. 2020

IEEE Access

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The inverse piezoelectric effect and trap effect in GaN HEMTs under the high electric field by reverse-bias step stress at cryogenic temperature (CT, 77K) have been investigated. It is found that the inverse piezoelectric effect is suppressed while the trap effect is enhanced at CT. Due to the lower tensile stress in the as-grown AlGaN barrier at CT, the amplitude of the critical voltage related to inverse piezoelectric effect increases from 75V at 300K to 100V at CT, mitigating the irreversible degradation of the devices. The inverse piezoelectric effect dominates the degradation of reverse gate leakage, which is weakened at CT. However, the devices suffer from more degradation of I d (decreases by 94.38%) and G m,max (decreases by 95.15%) at CT in the dark, induced by the serious trap effect due to the longer emission time. UV-light-assisted stress measurements have been utilized to identify the contribution of the two mechanisms to the degradation of device characteristics at CT. The degradation of I d (G m,max) is only 0.82% (3.31%) for the piezoelectric effect and 93.56% (91.84%) for trap effect at CT, respectively. INDEX TERMS AlGaN/GaN, cryogenic temperature, reverse-bias stress, high electric field, inverse piezoelectric effect, trap, degradation.

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“…The latter is the case of GaN-based devices in which the trapping phenomena cause a decrease of the number of electrons available for the conduction, with a consequent bending of the drain-source current, I DS [8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs

et al. 2019

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This paper presents the effects of optical radiation on the behavior of two scaled-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs). The tested devices, having a gate width of 100 and 200 µm and a gate length of 0.25 µm, were exposed to a laser beam with a wavelength of 404 nm (blue-ray) in order to investigate the main optical effects on the DC characteristics. Owing to the threshold shift and the charge generation, a marked increase of the gate and drain current was noticed. The occurrence of the kink effect in the absence of light exposure was identified, and a hypothesis about its origin is provided. The obtained results agree with the analysis previously carried out on gallium arsenide (GaAs)-based devices.

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On the Origin of Kink Effect in Current–Voltage Characteristics of AlGaN/GaN High Electron Mobility Transistors

Cited by 37 publications

References 34 publications

Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects

Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature

Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs

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