Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs

Caddemi, Alina; Cardillo, Emanuele; Patanè, Salvatore; Triolo, Claudia

doi:10.3390/electronics8060698

Cited by 11 publications

(6 citation statements)

References 21 publications

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“…An AlGaN back-barrier is commonly employed to block hot carriers from the channel into the buffer [20], but it also decrease 2DEG density because the back-barrier induces a sheet of negative charges at the GaN/AlGaN interface below the 2DEG channel. UV light was found to be able to suppress charge trapping in the buffer of GaN HMET [21], and changes in the trapping effect of devices exposed to UV light also influenced device output and noise characteristics [22][23][24]. Kang et al used a buffer layer consisting of multiple carbon-doped and undoped GaN layers to compensate the deep-acceptor states in the carbon-doped parts by electrons transferred from the undoped GaN regions [25,26], which helps to weaken buffer-induced CC under low drain voltage stress.…”

Section: Simulation Modelmentioning

confidence: 99%

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study

et al. 2021

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Carbon doping in the buffer of AlGaN/GaN high-electron-mobility transistors (HEMTs) leads to the notorious current collapse phenomenon. In this paper, an HEMT structure with a source-connected p-GaN (SCPG) embedded in the carbon-doped semi-insulating buffer is proposed to suppress the buffer-induced current collapse effect. Two-dimensional transient simulation was carried out to show the successful suppression of buffer-induced current collapse in the SCPG-HEMTs compared with conventional HEMTs. The mechanism of suppressing dynamic on-resistance degradation by ejecting holes from the SCPG into the high resistive buffer layer after off-state stress is illustrated based on energy band diagrams. This paper contributes an innovative device structure to potentially solve the buffer-induced degradation of the dynamic on-resistance in GaN power devices.

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Section: Simulation Modelmentioning

confidence: 99%

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study

et al. 2021

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“…The success of these technologies lies in the peculiar characteristics of the microwave circuits, mainly in terms of low cost, easy integration with traditional electronic systems and compact dimensions, i.e., the higher the frequency the smaller the size [ 3 , 4 , 5 , 6 , 7 ].…”

Section: Introductionmentioning

confidence: 99%

Microstrip Copper Nanowires Antenna Array for Connected Microwave Liquid Sensors

Cardillo

Tavella

Ampelli

2023

Sensors

Self Cite

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In this contribution, a 25 GHz planar antenna, designed and realized in microstrip technology, is exploited as a lightweight and compact liquid sensor. The high working frequency allows minimization of the sensor dimension. Moreover, particular attention was paid to keeping the design cost low. Indeed, the frequency of 25 GHz is widely exploited for many applications, e.g., up to the last decade concerning radars and, recently, 5G technology. Available commercial antennas allowed minimization of the effort that is usually required to design the microstrip sensor. The antenna was in-house realized, and the microstrip Cu conductor was modified through controlled anodic oxidation in order to enhance the sensing features. The sensor capability of detecting the presence and concentration of ethanol in water was experimentally demonstrated. In detail, a sensitivity of 0.21 kHz/(mg/L) and an average quality factor of 117 were achieved in a very compact size, i.e., 18 mm × 19 mm, and in a cost-effective way. As a matter of fact, the availability of devices able to collect data and then to send the related information wirelessly to a remote receiver represents a key feature for the next generation of connected smart sensors.

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“…The progress of the power electronics industry has been contingent on the level of progress in the semiconductor power device industry, otherwise known as the power electronic device industry and this particularly on the advancements in power electronic switches [ 8 ]. The power electronic switch industry has grown and improved drastically over the years and is now in a transitional phase from the more common silicon semiconductor technologies to a totally new phase of wide band gap (WBG) technologies [ 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 ]. This new phase is characterized by an improvement in the various characteristics and manufacturing techniques already in place for power electronic switches [ 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 ].…”

Section: Introductionmentioning

confidence: 99%

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Jiya

Gouws

2020

Micromachines

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As the need for green and effective utilization of energy continues to grow, the advancements in the energy and power electronics industry are constantly driven by this need, as both industries are intertwined for obvious reasons. The developments in the power electronics industry has over the years hinged on the progress of the semiconductor device industry. The semiconductor device industry could be said to be on the edge of a turn into a new era, a paradigm shift from the conventional silicon devices to the wide band gap semiconductor technologies. While a lot of work is being done in research and manufacturing sectors, it is important to look back at the past, evaluate the current progress and look at the prospects of the future of this industry. This paper is unique at this time because it seeks to give a good summary of the past, the state-of-the-art, and highlight the opportunities for future improvements. A more or less ‘forgotten’ power electronic switch, the four-quadrant switch, is highlighted as an opportunity waiting to be exploited as this switch presents a potential for achieving an ideal switch. Figures of merit for comparing semiconductor materials and devices are also presented in this review.

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Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs

Cited by 11 publications

References 21 publications

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study

Microstrip Copper Nanowires Antenna Array for Connected Microwave Liquid Sensors

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

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