On the Origin of Internal Gettering Suppression in Low Carbon CZ Silicon by Rapid Thermal Annealing

Maddalon‐Vinante, C.; Vallard, J. P.; Barbier, D.

doi:10.1149/1.2044098

Cited by 6 publications

(5 citation statements)

References 6 publications

(6 reference statements)

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“…This is in agreement with results reported by Maddalon-Vinante et al (17). They have found by FTIR measurements that during thermal treatment after a preceding RTA spherical instead of plate-like precipitates are formed which are not suitable to getter Cr (17,18). The shifting of S crit is more emphasized if we look on the samples with different concentration of vacancies.…”

Section: Ecs Transactions 25 (3) 67-78 (2009)supporting

confidence: 92%

Comparison of Evaluation Criteria for Efficient Gettering of Cu and Ni in Silicon Wafers

Kot¹,

Kissinger²,

Sattler³

et al. 2009

ECS Trans.

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The establishment of an evaluation criterion for efficient gettering of transition metals is a very important and difficult issue in the field of defect engineering on silicon wafers. In this work we present results of an investigation of the getter efficiency for Cu and Ni on Czochralski silicon wafers containing various concentrations of oxygen and vacancies. We compare the results with other works on criteria for efficient gettering and analyze their strengths and weaknesses.

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Section: Ecs Transactions 25 (3) 67-78 (2009)supporting

confidence: 92%

Comparison of Evaluation Criteria for Efficient Gettering of Cu and Ni in Silicon Wafers

Kot¹,

Kissinger²,

Sattler³

et al. 2009

ECS Trans.

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“…In a previous study, this new type of precipitate was proposed to be due to embryos formed on aggregates of vacancies created by RTA. 22 As the RTA gets longer, more aggregates would be formed and/or these would be larger, leading later on to an increased O i loss. However, we must note that these aggregates must be stable enough to survive the high-temperature treatments before the nucleation and growth steps.…”

Section: Discussionmentioning

confidence: 99%

Influence of rapid thermal annealing and internal gettering on Czochralski-grown silicon. I. Oxygen precipitation

Maddalon‐Vinante¹,

Ehret²,

Barbier³

1996

Journal of Applied Physics

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“…In the latter case the transition is a reconstruction. The steady-state nucleation rate G is defined by classical nucleation theory as a sum over the sequential transitions 20 1/G ϭ ⌺ 1/J k [1] where J k is the flux from k to k ϩ 1 for the particular case of equilibrium between the clusters and the solid solution of monomeric oxygen. The equilibrium cluster concentration, C k , is defined by the law of mass action and is proportional to the nth power of the oxy-gen concentration.…”

Section: Generation Rate Of Td As a Function Of Self-interstitial Con...mentioning

confidence: 99%

The Sensitivity of Thermal Donor Generation in Silicon to Self-interstitial Sinks

Voronkov

Voronkova

Batunina

et al. 2000

J. Electrochem. Soc.

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This work was initially intended to examine the effect of rapid thermal annealing (RTA) on the generation of thermal donors (TD) in silicon in the temperature range 450 to 500ЊC. RTA preanneals made at 1200ЊC in nitrogen were reported 1 to retard TD generation at 450ЊC for about 5 h, and so it was thought interesting to look at the temperature dependence of this retardation. Such an RTA-induced retardation was not found in the present study, however. The difference in the TD kinetics between as-grown and RTA samples was not significant, in accord with other recent data. 2 Instead of the expected retardation we observed another striking effect: it was noticed that the TD concentration was remarkably sensitive to the cooling rate of the sample after the TD-producing anneal steps. This effect was most evident for the RTA-treated samples annealed at 500ЊC, though it was found in as-grown samples too. The effect of annealing conditions on the TD kinetics is the subject of the present work.Experimental We used a set of wafers (0.675 mm thick) cut from the same crystal from adjacent positions and subjected to an RTA treatment at 1250ЊC for 35 s in nitrogen ambient. The crystal, 150 mm in diameter, was grown in the vacancy mode, 3 at the relatively high pull rate of 0.8 mm/min. The oxygen content was 1 ϫ 10 18 cm Ϫ3 (using the calibration factor 3.14 ϫ 10 17 cm Ϫ2 ), and the carbon content was below the detection limit of 2 ϫ 10 15 cm Ϫ3 . The crystal was boron doped to the concentration N B ϭ 1.7 ϫ 10 15 cm Ϫ3 . Rectangular samples (12 mm long and 3 mm wide) were cut from the central part of the wafers.The thermal donor generation anneals were performed in two different types of furnaces. One of these was an air ambient furnace and the other a vacuum furnace (the residual pressure was 10 Ϫ3 Torr). The anneals were performed using sequential time steps of 4 h (in most cases). A total duration of up to 80 h was accumulated in this way. In the air furnace each of the sequential anneal steps was followed by one of two different cooling procedures: either quenching (placing a sample on a thick silicon plate) or slow cooling (leaving a sample inside the furnace after switching-off the power). The fast cooling rate was about 60 K/s, the slow cooling rate was about 0.2 K/s. The cooling curves, T(t), were recorded using a thermocouple attached to a sample. After each of the annealing step the samples were slightly lapped so that the sample thickness was gradually reduced, finally down to 0.55 mm. In the vacuum tube furnace the cooling rate was fixed at about 0.8 K/s, intermediate between the slow and fast cooling conditions in the air furnace. The furnace temperature was controlled by a thermocouple, and maintained at prescribed value with the accuracy of 1ЊC for the vacuum furnace and 3ЊC for the air furnace.The TD concentration was deduced from Hall effect measurements at temperatures down to liquid helium. An example of a temperature dependence of the electron concentration n(T) in a TD containing sample is shown in Fig. 1. T...

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On the Origin of Internal Gettering Suppression in Low Carbon CZ Silicon by Rapid Thermal Annealing

Cited by 6 publications

References 6 publications

Comparison of Evaluation Criteria for Efficient Gettering of Cu and Ni in Silicon Wafers

Comparison of Evaluation Criteria for Efficient Gettering of Cu and Ni in Silicon Wafers

Influence of rapid thermal annealing and internal gettering on Czochralski-grown silicon. I. Oxygen precipitation

The Sensitivity of Thermal Donor Generation in Silicon to Self-interstitial Sinks

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