Influence of rapid thermal annealing and internal gettering on Czochralski-grown silicon. I. Oxygen precipitation

Maddalon‐Vinante, C.; Ehret, E.; Barbier, D.

doi:10.1063/1.361141

Cited by 13 publications

(10 citation statements)

References 18 publications

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“…With increasing RTA temperature the precipitates become more spherical. This is in agreement with results reported by Maddalon-Vinante et al (17). They have found by FTIR measurements that during thermal treatment after a preceding RTA spherical instead of plate-like precipitates are formed which are not suitable to getter Cr (17,18).…”

Section: Ecs Transactions 25 (3) 67-78 (2009)supporting

confidence: 93%

Comparison of Evaluation Criteria for Efficient Gettering of Cu and Ni in Silicon Wafers

Kot¹,

Kissinger²,

Sattler³

et al. 2009

ECS Trans.

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The establishment of an evaluation criterion for efficient gettering of transition metals is a very important and difficult issue in the field of defect engineering on silicon wafers. In this work we present results of an investigation of the getter efficiency for Cu and Ni on Czochralski silicon wafers containing various concentrations of oxygen and vacancies. We compare the results with other works on criteria for efficient gettering and analyze their strengths and weaknesses.

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Section: Ecs Transactions 25 (3) 67-78 (2009)supporting

confidence: 93%

Comparison of Evaluation Criteria for Efficient Gettering of Cu and Ni in Silicon Wafers

Kot¹,

Kissinger²,

Sattler³

et al. 2009

ECS Trans.

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“…4, it can be concluded that for higher the RTA temperature the precipitates become increasingly spherical. This result is well in agreement with the results of Maddalon-Vinante et al (5). They have found by FTIR measurements that during thermal treatment after a preceding RTA spherical instead of plate-like precipitates are formed which are not suitable to getter Cr.…”

Section: Ecs Transactions 18 (1) 995-1000 (2009)supporting

confidence: 93%

“…On the one hand, vacancies built into the growing precipitates can reduce the lattice strain which is due to the different molecular volume of silicon and silicon oxide. On the other hand, it was reported that the getter efficiency of precipitates for chromium in RTA pre-treated wafers is decreased (5,6).…”

Section: Introductionmentioning

confidence: 99%

Advances in the Understanding of Oxide Precipitate Nucleation in Silicon

Kissinger

Kot²,

Akhmetov³

et al. 2009

ECS Trans.

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The influence of vacancy supersaturation installed by RTA pre-treatments in CZ silicon wafers on oxide precipitate nucleation was investigated in the temperature range 700-1000 {degree sign}C. Precipitation is enhanced at 800 {degree sign}C and increases with increasing vacancy concentration. Getter efficiency tests for Cu and Ni have shown that the threshold value of the normalized inner surface is shifting to higher values for increasing RTA temperature. This can be explained by a morphological change of the oxide precipitates with increasing vacancy concentration from plate-like to spherical shape.

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“…3 The getter efficiency of oxygen precipitates depends on their density and morphology. 4,5 The density of the precipitates can be controlled by the temperature of RTA and it can be easily determined by preferential etching. The morphology of oxygen precipitates depends on the type and the concentration of dopants, the thermal history, and the annealing temperature and time.…”

mentioning

confidence: 99%

Morphology of Oxygen Precipitates in RTA Pre-Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy and STEM

Kot

Kissinger

Schubert

et al. 2014

ECS J. Solid State Sci. Technol.

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We used STEM and FTIR to investigate the morphology and stoichiometry of oxygen precipitates in samples pre-treated by RTA at 1250°C subsequently annealed in the temperature range between 800°C and 1000°C. The morphology of the oxygen precipitates depends on the temperature of the subsequent annealing. Annealing at 800°C results first of all in the formation of three dimensional dendritic precipitates while during annealing at 900°C or 1000°C mainly plate-like and octahedral precipitates are formed. The absorption bands of the dendritic SiOx precipitates were identified and simulated based on effective medium theory. All regular plate-like and octahedral precipitates could be well fitted assuming x = 2.

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Influence of rapid thermal annealing and internal gettering on Czochralski-grown silicon. I. Oxygen precipitation

Cited by 13 publications

References 18 publications

Comparison of Evaluation Criteria for Efficient Gettering of Cu and Ni in Silicon Wafers

Comparison of Evaluation Criteria for Efficient Gettering of Cu and Ni in Silicon Wafers

Advances in the Understanding of Oxide Precipitate Nucleation in Silicon

Morphology of Oxygen Precipitates in RTA Pre-Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy and STEM

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