Morphology of Oxygen Precipitates in RTA Pre-Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy and STEM

Kot, Dawid; Kissinger, G.; Schubert, Markus Andreas; Sattler, Andreas

doi:10.1149/2.0141411jss

Cited by 16 publications

(26 citation statements)

References 26 publications

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“…11,21,[40][41][42] In fact, this can be very well explained based on the effective medium theory as it is shown in many works. 11,[13][14][15]17,21 The simulated absorption bands of the oxygen precipitates show a strong dependence on the morphology and stoichiometry of oxygen precipitates as it is shown in Fig. 7.…”

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confidence: 85%

“…First, we analyzed FTIR spectra by effective medium theory in the samples with different morphologies of oxygen precipitates. 17 The important parameters for the calculations like the morphology and the size of precipitates were also measured by scanning transmission electron microscopy (STEM). In most cases, we obtained amorphous SiO 2 as the phase of the oxygen precipitates.…”

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confidence: 99%

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Current Stage of the Investigation of the Composition of Oxygen Precipitates in Czochralski Silicon Wafers

Kot

Kissinger

Schubert

et al. 2017

ECS J. Solid State Sci. Technol.

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In this work, we look on the current stage of the investigation of the composition of oxygen precipitates obtained with the help of different techniques. Moreover, we present our recent and new investigation of the composition of oxygen precipitates carried out by means of energy dispersive X-ray spectroscopy, electron energy loss spectroscopy, and Fourier transform infrared spectroscopy. The FTIR spectra measured at liquid helium temperature are compared with the spectra simulated on the basis of experimental results obtained by scanning transmission electron microscopy. Oxygen precipitates formed in Czochralski (CZ) silicon wafers in consequence of the thermal treatment were investigated since many decades (see e.g. Ref. 1). The main reason why so much effort was directed toward these defects was the impact which they have on integrated circuits and the properties of the silicon wafer itself. Oxygen precipitates can increase the resistivity of CZ silicon, change the wafer strength and cause warpage of the wafers. [2][3][4] It was also demonstrated that metallic impurities can be effectively trapped at oxygen precipitates in the process of gettering. [5][6][7][8][9] All these features of the oxygen precipitates require the control of precipitation in the production process of silicon devices. However, this cannot be optimally executed if the features of oxygen precipitates like their composition are not fully known. In spite of the wide knowledge about oxygen precipitation, the composition of oxygen precipitates SiO x still remains under ongoing discussion. This is due to the different x values varying from x = 1 to x = 2 which can be found in the literature. [10][11][12][13][14][15][16][17][18][19][20] In 1986, Skiff et al. investigated plate-like precipitates by electron energy loss spectroscopy (EELS) in the near-edge and ionization edge range. 10 The composition which they found was SiO 0.95 . At the beginning of the 90ies, Borghesi et al. modeled Fourier transform infrared spectroscopy (FTIR) spectra by an effective medium approach and concluded that the absorption band of precipitates at 1230 cm −1 can be well reproduced if SiO 1.8 is used.11 However, in 1995 Vanhellemont investigated the growth kinetics of oxygen precipitates based on the solubility and diffusivity of oxygen in silicon using precipitate sizes determined by transmission electron microscopy (TEM). He demonstrated that the precipitated phase is closer to SiO than to SiO 2 .12 The later works, exploiting again FTIR spectroscopy and effective medium theory for the determination of the composition of the oxygen precipitates and carried out by De Gryse et al., confirmed the thesis of Vanhellemont. In the beginning the authors obtained SiO x with x = 1.1-1.2 but in their more recent work they modified the algorithm and concluded that the precipitated phase behaves optically as a mixture of amorphous silicon and amorphous SiO 2 .13,14 Meduňa et al. investigated the composition of oxygen precipitates in silicon wafers characterized by different th...

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confidence: 85%

mentioning

confidence: 99%

Current Stage of the Investigation of the Composition of Oxygen Precipitates in Czochralski Silicon Wafers

Kot

Kissinger

Schubert

et al. 2017

ECS J. Solid State Sci. Technol.

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“…Apparently, its aspect ratio is larger than that of the platelet precipitate morphology related with the 1230 cm −1 band. Returning now to the analysis of our results, we have to state that all the evidence from various studies so far lead us to correlate the 1170 cm −1 band to platelet precipitates, although the 1060 and 1080 cm −1 bands to spheroidal precipitates [72][73][74][75][76]. The band at 1040 cm −1 is just outside the frequency range (1050-1150 cm −1 ) where spheroidal precipitate bands appear [72].…”

Section: Resultsmentioning

confidence: 86%

“…The analysis shows the existence of five additional bands at around 1000, 1040, 1060, 1080 and 1170 cm −1 . Notably, the bands found by the above analysis of the Lorentzian deconvolution are physically meaningful since there is ample experimental evidence, from various measurements also at low temperature, that the bands are related with oxygen precipitate morphologies [11][12][13][71][72][73][74][75][76]. Initially, we will discuss the origin of each particular band in an attempt A mathematical way to study the behavior of a precipitate is to consider its shape as an ellipsoid with three main axes (a 1 , a 2 , a 3 ).…”

Section: Resultsmentioning

confidence: 99%

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IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon

Sgourou

Angeletos

Chroneos

et al. 2017

J Mater Sci: Mater Electron

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Peculiarity of Electric Properties of Oxygen‐Implanted Silicon at Early Precipitation Stages

Данилов

Vyvenko

Loshachenko

et al. 2019

Physica Status Solidi (a)

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The evolution of the defect structure and electric properties of the oxygenimplanted silicon samples subjected by thermal treatment in the temperature range from 700 to 1100 C is investigated using transmission electron microscopy (TEM) and space charge spectroscopy. It is established that embedded positive charge of oxygen precipitates (OPs) decreases inversely proportional to their size. This fact gives evidence about localization of the charge in thin nonstoichiometric shell of OP. Annealing at 700 C results in the formation of nanosized defects and in an inhomogeneous electric structure of the implanted region: the embedded positive charge is localized in the near-surface vacancy-rich part of the implanted region, whereas the strongly compensated layer is formed in self-interstitial-rich deepest part of the implanted region.

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Morphology of Oxygen Precipitates in RTA Pre-Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy and STEM

Cited by 16 publications

References 26 publications

Current Stage of the Investigation of the Composition of Oxygen Precipitates in Czochralski Silicon Wafers

Current Stage of the Investigation of the Composition of Oxygen Precipitates in Czochralski Silicon Wafers

IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon

Peculiarity of Electric Properties of Oxygen‐Implanted Silicon at Early Precipitation Stages

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