On the ohmicity of Schottky contacts

Sachenko, A. V.; Belyaev, A. E.; Конакова, Р. В.

doi:10.1134/s106378261606021x

Cited by 6 publications

(7 citation statements)

References 9 publications

(8 reference statements)

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“…However, the physical reason for ohmic contact realization in this case is related to appearance of high density of dislocations (which ensure current flow through metal shunts) rather than to high surface recombination velocity. Moreover, as was shown in [27], the current of majority charge carriers flowing into ohmic contact does not depend on the surface recombination velocity value.…”

mentioning

confidence: 66%

“…In particular, several physical mechanisms explaining temperature growth of ohmic contacts resistivity were proposed in the recent 10-15 years. Among them, there are current flow through metal shunts coupled with extensive defects in semiconductors [20][21][22][23][24][25][26], current flow in ohmic contacts with a doping step [27] and the mechanism of partial screening of surface charge states at high doping levels [28].…”

Section: Historical Backgroundmentioning

confidence: 99%

“…This high velocity at the contact is obtained after previous lapping of semiconductor surface before formation of a metal-semiconductor contact. Indeed, it was shown in a number of works (see [27]) that the contact becomes ohmic after pre-lapping of semiconductor surface. However, the physical reason for ohmic contact realization in this case is related to appearance of high density of dislocations (which ensure current flow through metal shunts) rather than to high surface recombination velocity.…”

mentioning

confidence: 99%

“…The case of the so-called doping step (when the semiconductor near-contact region is doped very heavily -up to degeneracy) is in fact a combination of the thermionic and tunnel mechanisms of current flow [27].…”

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confidence: 99%

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Sachenko¹,

Конакова²,

Belyaev³

2018

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. This review is devoted to presentation and analysis of physical mechanisms of ohmic contacts formation in semiconductors. In addition to the classical mechanisms known for decades, new mechanisms for current flow in ohmic contacts researched for the recent decade are described. Used in this review were the original results of the authors, which they described earlier in various papers of recent years. Current flow through dislocations combined with metal shunts, realized, in particular, on the lapped semiconductor surface; detailed current flow mechanism in the presence of doping step and current flow through the heavily doped semiconductor surface charge states reduction should be noted among the new mechanisms of current flow. These current flow mechanisms are characterized by the presence of specific contact resistance growth with temperature increase in some temperature intervals and contacts ohmicity up to helium temperatures.

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mentioning

confidence: 66%

Section: Historical Backgroundmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Sachenko¹,

Конакова²,

Belyaev³

2018

Semicond. Phys. Quantum Electron. Optoelectron.

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show abstract

Section: Historical Backgroundmentioning

confidence: 99%

Untitled

2018

Semicond. Phys. Quantum Electron. Optoelectron.

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This review is devoted to presentation and analysis of physical mechanisms of ohmic contacts formation in semiconductors. In addition to the classical mechanisms known for decades, new mechanisms for current flow in ohmic contacts researched for the recent decade are described. Used in this review were the original results of the authors, which they described earlier in various papers of recent years. Current flow through dislocations combined with metal shunts, realized, in particular, on the lapped semiconductor surface; detailed current flow mechanism in the presence of doping step and current flow through the heavily doped semiconductor surface charge states reduction should be noted among the new mechanisms of current flow. These current flow mechanisms are characterized by the presence of specific contact resistance growth with temperature increase in some temperature intervals and contacts ohmicity up to helium temperatures.

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