Vertical organic field effect transistor: on–off state definition related to ambipolar gate biasing

Seidel, Keli Fabiana; Rossi, Lucieli; Jastrombek, Diana; Kalinowski, Hypolito José

doi:10.1007/s00339-018-1982-x

Cited by 7 publications

(5 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…VOFET devices are typically known to demonstrate an absence of saturation in the output characteristics owing to their short channel lengths 2,15,16,40 . In principle, due to the short distance between the source and drain electrodes, the application of V DS leads to large source drain electric fields.…”

Section: Resultsmentioning

confidence: 99%

Edge-driven nanomembrane-based vertical organic transistors showing a multi-sensing capability

et al. 2020

View full text Add to dashboard Cite

The effective utilization of vertical organic transistors in high current density applications demands further reduction of channel length (given by the thickness of the organic semiconducting layer and typically reported in the 100 nm range) along with the optimization of the source electrode structure. Here we present a viable solution by applying rolled-up metallic nanomembranes as the drain-electrode (which enables the incorporation of few nanometer-thick semiconductor layers) and by lithographically patterning the source-electrode. Our vertical organic transistors operate at ultra-low voltages and demonstrate high current densities (~0.5 A cm−2) that are found to depend directly on the number of source edges, provided the source perforation gap is wider than 250 nm. We anticipate that further optimization of device structure can yield higher current densities (~10 A cm−2). The use of rolled-up drain-electrode also enables sensing of humidity and light which highlights the potential of these devices to advance next-generation sensing technologies.

show abstract

Section: Resultsmentioning

confidence: 99%

Edge-driven nanomembrane-based vertical organic transistors showing a multi-sensing capability

et al. 2020

View full text Add to dashboard Cite

show abstract

“…ITO and Sn work functions are ∼ 4.7 eV 27 and ∼ 4.4 eV 6 , respectively (see flat band energy diagram in supplementary material). PBT's HOMO (highest occupied molecular orbital) and LUMO (lowest unoccupied molecular orbital) energy levels are reported as ∼ 5.3 eV and ∼ 3.3 eV, respectively 28 .…”

Section: Resultsmentioning

confidence: 99%

“…Many optoelectronic devices are based on vertical stacked layers forming a sandwich structure, such as light-emitting diodes (LEDs) 1 , light-emitting electrochemical cells (LECs) 2,3 , electrochromic devices 4 ,solar cells 5 , vertical transistors 6,7 , among others. The efficiency of these devices depend on many different conditions.…”

Section: Introductionmentioning

confidence: 99%

Effects of a Flexible Ion Gel as an Active Outer-Layer when in Contact with a Metallic Electrode

Moura¹,

Paula²,

Benvenho³

et al. 2022

Preprint

View full text Add to dashboard Cite

In this work the effect of an ion gel outer-layer stuck on top of ITO/PBT/Sn devices was investigated towards its effects on the electrical properties. When this external electrolyte film is in contact with any top permeable electrode it produces a self-biasing effect and changes the charge carriers injection properties. The outer-layer promoted situations where the output current increases up to two orders of magnitude and others where the output current decreases one order of magnitude in comparison to the same samples without it. Admittance spectroscopy measurements were made and the proposed equivalent circuit model indicates that the interfacial electrical properties dominate charge injection face to the bulk properties when the outer-layer is present. All the changes observed here are reversible after the ion gel is detached and replaced, indicating that ions do not diffuse into the active layer. The observed results can contribute to improve the current density in certain sandwich structures as well as notify that electrolyte external films can behave as an active layer promoting electrical changes into sandwich devices and can be extended to cases where the electrolyte film is used as substrate.

show abstract

“…[ 38,39 ] For such purpose, the source electrode of VOFETs must meet the requirements of being ultra‐thin or porous. Initially, the source electrode of VOFETs is made of ultra‐thin copper/aluminum (20 nm/10 nm) electrodes, [ 19,40 ] but now several different types of source electrodes for VOFETs have been developed, such as nanopatterned electrodes, carbon nanotube/conductive nanowire electrodes and graphene electrodes. [ 33,37,41,42 ]…”

Section: Resultsmentioning

confidence: 99%

Doped Vertical Organic Field‐Effect Transistors Demonstrating Superior Bias‐Stress Stability

Qiu

Guo

Chen

et al. 2021

Small

View full text Add to dashboard Cite

Bias‐stress stability is essential to the practical applications of organic field‐effect transistors (OFETs), yet it remains a challenge issue in conventional planar OFETs. Here, the feasibility of achieving high bias‐stress stability in vertical structured OFETs (VOFETs) in combination with doping techniques is demonstrated. VOFETs with silver nanowires as source electrodes are fabricated and the device performance is optimized by understanding the influence of device parameters on performance. Then, the bias‐stress stability of the optimized PDVT‐10 VOFETs is investigated and found to be superior to the corresponding planar OFETs, which is attributed to reduced trapping effects of gate dielectrics in the VOFETs. Moreover, the bias‐stress stability can be further improved by doping PDVT‐10 to passivate bulk traps. Consequently, the characteristic time of doped PDVT‐10 VOFETs extracted from stretched exponential equation is found to be over four times larger than that of the planar PDVT‐10 OFETs under the same bias‐stress conditions. These results present the promising applications of VOFETs as well as an effective strategy to achieve highly bias‐stress stable OFETs.

show abstract

Vertical organic field effect transistor: on–off state definition related to ambipolar gate biasing

Cited by 7 publications

References 24 publications

Edge-driven nanomembrane-based vertical organic transistors showing a multi-sensing capability

Edge-driven nanomembrane-based vertical organic transistors showing a multi-sensing capability

Effects of a Flexible Ion Gel as an Active Outer-Layer when in Contact with a Metallic Electrode

Doped Vertical Organic Field‐Effect Transistors Demonstrating Superior Bias‐Stress Stability

Contact Info

Product

Resources

About