On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals

Zatryb, G.; Podhorodecki, A.; Misiewicz, J.; Cardin, Julien; Gourbilleau, Fabrice

doi:10.1186/1556-276x-6-106

Cited by 57 publications

(68 citation statements)

References 25 publications

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“…The samples examined in the present study were previously investigated by means of absorption spectroscopy [11]. The Tauc formula (α E ) = A ( E − E g ) m was used to estimate the optical band gap ( E g ) of these structures.…”

Section: Resultsmentioning

confidence: 99%

Correlation between matrix structural order and compressive stress exerted on silicon nanocrystals embedded in silicon-rich silicon oxide

et al. 2013

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Silicon nanocrystals embedded in a silicon oxide matrix were deposited by radio frequency reactive magnetron sputtering. By means of Raman spectroscopy, we have found that a compressive stress is exerted on the silicon nanocrystal cores. The stress varies as a function of silicon concentration in the silicon-rich silicon oxide layers varies, which can be attributed to changes of nanocrystal environment. By conducting the Fourier transform infrared absorption experiments, we have correlated the stresses exerted on the nanocrystal core to the degree of matrix structural order.PACS78.67.Bf, 78.67.Pt, 73.63.Bd, 78.47.D, 74.25.Nd

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Section: Resultsmentioning

confidence: 99%

Correlation between matrix structural order and compressive stress exerted on silicon nanocrystals embedded in silicon-rich silicon oxide

et al. 2013

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“…It is known that this model is widely used for the decay curve analysis of Si nanocrystals [18] . The least squares fit of Equation 1 to experimental data brings values of τ 0 and β.…”

Section: Resultsmentioning

confidence: 99%

“…The latter β value corresponds to a larger distribution width of decay rates for Au-nc-Si-SiO x interface. In the case of stretched exponential relaxation function, the PL decay might be analyzed more thoroughly by recovering the distribution of recombination rates [18]. So, having the constants of τ 0 and β , taken from experimental data fit to (1), it is possible to obtain the average decay time constant < τ> , which can be defined by:…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence decay rate of silicon nanoparticles modified with gold nanoislands

et al. 2014

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We investigated plasmon-assisted enhancement of emission from silicon nanoparticles (ncs-Si) embedded into porous SiO x matrix in the 500- to 820-nm wavelength range. In the presence in the near-surface region of gold nanoisland film, ncs-Si exhibited up to twofold luminescence enhancement at emission frequencies that correspond to the plasmon resonance frequency of Au nanoparticles. Enhancement of the photoluminescence (PL) intensity was attributed to coupling with the localized surface plasmons (LSPs) excited in Au nanoparticles and to increase in the radiative decay rate of ncs-Si. It has been shown that spontaneous emission decay rate of ncs-Si modified by thin Au film over the wide emission spectral range was accelerated. The emission decay rate distribution was determined by fitting the experimental decay curves to the stretched exponential model. The observed increase of the PL decay rate distribution width for the Au-coated nc-Si-SiO x sample in comparison with the uncoated one was explained by fluctuations in the surface-plasmon excitation rate.PACS78. 67. Bf; 78.55.-m

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“…In general, the parameter β is related to the stretching of the decay process and is a direct measure of the width of the decay rate distribution. In the case of stretched exponential relaxation function, the PL decay may be analyzed more thoroughly by recovering the distribution of recombination rates [16]. Using the values of τ 0 and β measured at λ = 780 nm, we calculated the asymptotic form of the decay rates probability density function Ф(k) that might be obtained by the saddle-point method [18]:…”

Section: Resultsmentioning

confidence: 99%

“…It is known that the stretched exponential function is widely used for the decay curve analysis of Si nanocrystals [16]. The least-squares fit of Eq.…”

Section: Resultsmentioning

confidence: 99%

Nickel-induced enhancement of photoluminescence in nc-Si-SiOx nanostructures

Michailovska¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The effect of nickel silicide interlayer on the intensity of photoluminescence (PL) from Si nanoclusters (nc) in normally deposited and obliquely deposited in vacuum SiO x /Ni/Si structures have been studied using spectral and time-resolved PL measurements. It has been shown that the intensity of PL band in SiO x /Ni/Si samples is essentially higher than that in reference SiO x /Si samples (without the nickel interlayer) with the same characteristics and treatment. The PL intensity enhancement factor is equal to 5.77 for normally deposited samples and 18 for obliquely deposited samples. The unchanged spectral shape of PL bands and similar position of PL maximum in samples with and without nickel silicide interlayer indicates that in the SiO x /Ni/Si structures after annealing no additional emitting centers are introduced to compare with reference one. Time-resolved measurements showed that PL decay rate was decreased from 8. for SiO x /Si specimens to 2.8610 4 s -1 for SiO x /Ni/Si one. The emission decay rate distribution was determined by fitting the experimental decay curves to the stretchedexponential model. The observed narrow decay rate distribution, decrease of the PL decay rate and enhancement of the PL intensity in SiO x /Ni/Si samples can be assigned to the processes of nickel silicide passivation of the dangling bonds at the interface of Si nanoparticles and the silicon oxide matrix, which is more effective in porous samples.

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On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals

Cited by 57 publications

References 25 publications

Correlation between matrix structural order and compressive stress exerted on silicon nanocrystals embedded in silicon-rich silicon oxide

Correlation between matrix structural order and compressive stress exerted on silicon nanocrystals embedded in silicon-rich silicon oxide

Photoluminescence decay rate of silicon nanoparticles modified with gold nanoislands

Nickel-induced enhancement of photoluminescence in nc-Si-SiOx nanostructures

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