On the microstructure and interfacial properties of sputtered nickel thin film on Si (1 0 0)

Abstract

Ni films of thickness ranging from 150 to 250 nm were deposited by DC magnetron sputtering on to Si (100) substrates maintained at room temperature and followed by post-annealing at 300 and 500 °C for 30 min. Other set of Ni films were deposited on to Si (1 0 0) substrates held at annealing temperature of 300 and 500 °C for 30 min. Microstructural investigation by field emission scanning electron microscope (FE-SEM) and atomic force microscope (AFM) revealed columnar morphology with voided boundaries for films deposited at room temperature and was retained after post-deposition annealing at higher temperatures. Nickel silicide formation with isosceles triangle diffusion front was confirmed by cross-sectional highresolution transmission electron microscopy (X-HRTEM) for post-annealed Ni films. Thin film deposited at high substrate temperatures having near-equiaxed structure found to be the best route to fabricate thin films without silicide formation.

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

“…Similar to RF magnetron sputtering, the results in [116][117][118][119] indicated that the surface roughness of the deposited films increased with the substrate temperature. For example, Priyadarshini et al [116] found that σ RMS of Ni thin films was 3.85, 10 and 23 nm when the substrate temperature was RT, 300 and 600 °C. This was mainly attributed to the grain growth taking place for the increase in rate of surface atom migration at higher substrate temperatures because the atoms obtained extra energy other than kinetic energy when they arrived the substrates [116].…”

“…The surface roughness of thin films grown by DC magnetron sputtering has also been analyzed by other researchers [116][117][118][119][120][121]. Similar to RF magnetron sputtering, the results in [116][117][118][119] indicated that the surface roughness of the deposited films increased with the substrate temperature. For example, Priyadarshini et al [116] found that σ RMS of Ni thin films was 3.85, 10 and 23 nm when the substrate temperature was RT, 300 and 600 °C.…”

“…For example, Priyadarshini et al [116] found that σ RMS of Ni thin films was 3.85, 10 and 23 nm when the substrate temperature was RT, 300 and 600 °C. This was mainly attributed to the grain growth taking place for the increase in rate of surface atom migration at higher substrate temperatures because the atoms obtained extra energy other than kinetic energy when they arrived the substrates [116]. However, Jin et al [120] and Nam et al [121] found that there was an optimal substrate temper ature to deposit the smoothest films.…”

Properties of nickel films growth by radio frequency magnetron sputtering at elevated substrate temperatures

“…Only a slight increase in the crystallite dimension of the Ni grains could be observed with increasing substrate temperatures employed from room temperature to 300°C, as consistent with the results of the surface topography analysis. This phenomenon was reported to occur owing to a slight improvement in the rate of the surface migration of adatoms as the substrate temperature increases [18]. The estimated average grain sizes of the Ni films deposited at room temperature, 100, 200, and 300°C were 10.0, 11.1, 14.3, and 15.4 nm, respectively.…”

Room‐Temperature Micropillar Growth of Lithium–Titanate–Carbon Composite Structures by Self‐Biased Direct Current Magnetron Sputtering for Lithium Ion Microbatteries

“…Another important parameter is the possibility of gas phase nucleation occurring at the 60 mTorr argon gas pressure and 8 cm working distance as used in this paper, selected based on the work of Gunnarsson et al for TiO 2 . For example, Geetha Priyadarshini et al have investigated the effects of substrate bias, gas pressure, and deposition temperature of TiO 2 , but have neither used similar bias ranges nor high enough gas pressures . Also, most methods apply substrate temperatures of 400–600 °C to enhance crystallization and stoichiometry using, e.g., RF‐sputtering or ion‐beam sputtering of Li 4 Ti 5 O 12 .…”