On the mechanism of the effect of adsorption-desorption processes on the electrophysical parameters of a germanium surface

Kiselev, V. F.; Козлов, С. Н.; Novototskii-Vlasov, Yu.F.; Prudnikov, R. V.

doi:10.1016/0039-6028(68)90042-3

Cited by 10 publications

(1 citation statement)

References 10 publications

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“…The surface phase is understood as a thin film on the surface (1 monolayer thickness), which is in a state of thermodynamic equilibrium with a silicon substrate and has a composition, structure and properties that differ from the composition, structure and properties of "bulk" silicon, "bulk" adsorbate and their possible "bulk" compounds. When analyzing a silicon substrate coated with the surface phase, the EELS spectrum has a well-defined distribution of loss peaks and therefore can serve as a characteristic of this two-dimensional phase [2].…”

Section: Methodsmentioning

confidence: 99%

Annealing Effect on the Composition and Electrophysical Properties of N-Type Silicon Surface

Bzhikhatlov

Luev

2020

NHC

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During low-temperature annealing, the segregation of the alloying element leads to a strong enrichment of the surface layer, causing a rearrangement of the surface electron structure. This change in the electron structure is manifested in the characteristic energy loss spectra. Annealing of single crystals at 400–500 K leads to an increase in the density of surface electron states. As shown by the calculations of the surface potential using experimental data on the temperature dependence of the surface concentration, dopant segregation causes a linear increase in the surface potential.

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Section: Methodsmentioning

confidence: 99%

Annealing Effect on the Composition and Electrophysical Properties of N-Type Silicon Surface

Bzhikhatlov

Luev

2020

NHC

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The proton mechanism of neutralization of surface recombination and fast capture centres on germanium

Kiselev¹,

Матвеев²,

Prudnikov³

1978

Phys. Stat. Sol. (a)

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The adsorption effect of molecules with different electron structure on the parameters of the surface states on the germanium real surface is investigated. It is shown that the neutralization of surface recombination and fast capture centres in adsorption are not connected with the dipole moment of adsorbed molecules. The proton mechanism of neutralization of these centres is suggested. The proton sources are the coordination‐bound water molecules on the surface.

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Nonvolatile Foreign Additives on the Solid Surface

Morrison

1977

The Chemical Physics of Surfaces

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On the mechanism of the effect of adsorption-desorption processes on the electrophysical parameters of a germanium surface

Cited by 10 publications

References 10 publications

Annealing Effect on the Composition and Electrophysical Properties of N-Type Silicon Surface

Annealing Effect on the Composition and Electrophysical Properties of N-Type Silicon Surface

The proton mechanism of neutralization of surface recombination and fast capture centres on germanium

Nonvolatile Foreign Additives on the Solid Surface

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