On the Low Temperature Electrical Breakdown of Highly Compensated Germanium

Komatsubara, K. F.; Kurono, Hirokazu

doi:10.1143/jpsj.17.883

Cited by 3 publications

(1 citation statement)

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“…[4][5][6][7] Other work not considered here has also been done in this field. [8][9][10][11][12][13][14] This brings within the range of the theory the dependence of the electric breakdown field in bulk materials on compensation ratio.…”

Section: Introductionmentioning

confidence: 99%

Effect of Compensation on Breakdown Fields in Homogeneous Semiconductors

Cohen

Landsberg

1967

Phys. Rev.

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Using Bloch and hydrogen-like functions, the impact-ionization coefficient has been calculated for processes in which an electron in a band collides with an electron on an impurity so as to ionize it. The problem is solved in the zero-order approximation, which is valid for trap depths large compared to kT e . Estimates of impact-ionization cross sections obtained this way are in good agreement with exact numerical calculators for the range relevant to this paper. The theory is applied to study the effect of doping on breakdown electric fields in bulk materials at low temperatures. Comparison with experimental work done by Lambert on p-type germanium yields satisfactory agreement with the theory. Graphs of the impact-ionization coefficient as a function of electron temperature have also been obtained for several trap depths. Finally, we present a framework for predicting breakdown fields if donor and acceptor concentrations are known.

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