Effect of Compensation on Breakdown Fields in Homogeneous Semiconductors

Cohen, Madeline; Landsberg, P. T.

doi:10.1103/physrev.154.683

Cited by 35 publications

(11 citation statements)

References 19 publications

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“…In this case, A I exponentially depends on the acceptor level depth (A I ∼ exp (−E A / (k B T )), which, in fact, suggests the exponential dependence of F B on E A . 25 As we showed above when studying the structure impedance, in a magnetic field the E A value shifts to the high-energy region by ∆E H A . Qualitatively, it is obvious that the enhancement of E A relative to the valence band results in the growth of the impact ionization activation energy; i.e., the process will be initiated at large F B (V c b ) (Fig.…”

Section: The DC Magnetoresistive Effectmentioning

confidence: 99%

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Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure

et al. 2017

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We report on abrupt changes in dc resistance and impedance of a diode with the Schottky barrier based on the Mn/SiO2/p-Si structure in a magnetic field. It was observed that at low temperatures the dc and ac resistances of the device change by a factor of more than 106 with an increase in a magnetic field to 200 mT. The strong effect of the magnetic field is observed only above the threshold forward bias across the diode. The ratios between ac and dc magnetoresistances can be tuned from almost zero to 108% by varying the bias. To explain the diversity of magnetotransport phenomena observed in the Mn/SiO2/p-Si structure, it is necessary to attract several mechanisms, which possibly work in different regions of the structure. The anomalously strong magnetotransport effects are attributed to the magnetic-field-dependent impact ionization in the bulk of a Si substrate. At the same time, the conditions for this process are specified by structure composition, which, in turn, affects the current through each structure region. The effect of magnetic field attributed to suppression of impact ionization via two mechanisms leads to an increase in the carrier energy required for initiation of impact ionization. The first mechanism is related to displacement of acceptor levels toward higher energies relative to the top of the valence band and the other mechanism is associated with the Lorentz forces affecting carrier trajectories between scatterings events. The estimated contributions of these two mechanisms are similar. The proposed structure is a good candidate for application in CMOS technology-compatible magnetic- and electric-field sensors and switching devices.

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Section: The DC Magnetoresistive Effectmentioning

confidence: 99%

“…The change in the device current with time and the breakdown criterion can be quantitatively estimated using the balance equation for a kinetic process, which determines the hole density in a certain electric field (at a certain bias voltage). 25 In the simplified case, this equation can be written in the form …”

Section: The DC Magnetoresistive Effectmentioning

confidence: 99%

Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure

et al. 2017

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“…Below 40 K the current through the diode at the forward bias attaining the threshold value V b c ≈ 2 V increases by a few orders of magnitude. Such behavior means that at V b c ≈ 2 V the autocatalytic process of impact ionization of the shallow acceptor boron in the bulk of the semiconductor take place 25 . When the high bias voltage is applied, carriers acquire the kinetic energy, which exceeds the energy of ionization of acceptor impurities; i.e., impact ionization occurs.…”

Section: The DC Magnetoresistive Effectmentioning

confidence: 99%

Magnetic-field-driven electron transport in ferromagnetic/ insulator/semiconductor hybrid structures

Волков

Tarasov

Рауцкий

et al. 2017

Journal of Magnetism and Magnetic Materials

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Abstract. Extremely large magnetotransport phenomena were found in the simple devices fabricated on base of the Me/SiO 2 /pSi hybrid structures (where Me are Mn and Fe). These effects include gigantic magnetoimpedance (MI), dc magnetoresistance (MR) and the lateral magneto-photo-voltaic effect (LMPE). The MI and MR values exceed 10 6 % in magnetic field about 0.2 T for Mn/SiO 2 /p-Si Schottky diode. LMPE observed in Fe/SiO 2 /p-Si lateral device reaches the value of 10 4 % in a field of 1 T. We believe that in case with the Schottky diode MR and MI effects are originate from magnetic field influence on impact ionization process by two different ways. First, the trajectory of the electron is deflected by a magnetic field, which suppresses acquisition of kinetic energy and therefore impact ionization. Second, the magnetic field gives rise to shift of the acceptor energy levels in silicon to a higher energy. As a result, the activation energy for impact ionization significantly increases and consequently threshold voltage rises. Moreover, the second mechanism (acceptor level energy shifting in magnetic field) can be responsible for giant LMPE.

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“…15 For acceptor levels with an energy large compared to kT, the probability of impact ionization exponentially decreases with the depth of the acceptor level, and exponentially increases with the hole velocity. 16 Additionally, the recombination process is less effective when holes have high velocity since the capture cross section decreases with increasing carrier energy.…”

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confidence: 99%

“…3͑b͒ can be understood as follows. For small hole velocities ͑i.e., less wide energy barrier or low current͒, the rate of single hole capture is a few orders of magnitude larger than the impact ionization, 16,17 and most carriers are in the impurity band with low mobility ͓see bottom left, Fig. 3͑b͔͒.…”

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confidence: 99%

Large magnetoresistance in Si:B-SiO2-Al structures

Schoonus

Swagten

Koopmans

2008

Journal of Applied Physics

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A magnetic-field-dependent resistance change of eight orders of magnitude is observed in boron-doped Si-SiO2-Al structures. In order to identify the elementary mechanisms governing this phenomenon, the thickness of the oxidic layer, which is used as an interface energy barrier, has been varied by changing the exposure time to an oxygen plasma. Next, the chemical composition has been monitored by in situ x-ray photoelectron spectroscopy measurements. From current-voltage measurements, we observe that at low temperatures, an ultrathin SiO2 layer provides the kinetic energy to trigger an autocatalytic process of impact ionization. A magnetic field suppresses the onset of impact ionization to higher electric fields, resulting in a large magnetoresistance.

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Effect of Compensation on Breakdown Fields in Homogeneous Semiconductors

Cited by 35 publications

References 19 publications

Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure

Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure

Magnetic-field-driven electron transport in ferromagnetic/ insulator/semiconductor hybrid structures

Large magnetoresistance in Si:B-SiO2-Al structures

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