“…This technique strains the film-substrate system in uniaxial tension to induce film cracking (fracture) and at higher strains (N8%) film delamination can occur between the crack fragments [4][5][6]. When fragmentation testing is performed in-situ, with optical light microscopy, scanning electron microscopy (SEM), or 4-point-probe (4PP) resistance measurements [6][7][8][9], the initial fracture strain, ε f , can be ascertained. The minimum crack spacing at saturation, λ min , and the initial fracture strain can be used with the shear lag model [4,10] to calculate the interfacial shear stress, τ IFSS (Eq.…”