Abstract:We study the limits of the applicability of a drift-diffusion (DD) based model for hot-carrier degradation (HCD). In this approach the rigorous but computationally expensive solution of the Boltzmann transport equation is replaced by an analytic expression for the carrier energy distribution function. On the one hand, we already showed that the simplified version of our HCD model is quite successful for LDMOS devices. On the other hand, hot carrier degradation models based on the drift-diffusion and energy tra… Show more
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